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Homogeneous Strain Relaxation and Mosaic Spread in InGaAs/GaAs Heterostructures Using Triple Axis Diffractometry

Published online by Cambridge University Press:  06 March 2019

M. S. Goorsky ,
K. M. Matney ,
G. Chu ,
R. S. Goldman  and
K. L. Kavanagh
M. S. Goorsky
Affiliation:
Department of Materials Science and Engineering University of California, Los Angeles 90024-1595
K. M. Matney
Affiliation:
Department of Materials Science and Engineering University of California, Los Angeles 90024-1595
G. Chu
Affiliation:
Department of Materials Science and Engineering University of California, Los Angeles 90024-1595
R. S. Goldman
Affiliation:
Department of Electrical and Computer Engineering University of California, San Diego 92093-0407
K. L. Kavanagh
Affiliation:
Department of Electrical and Computer Engineering University of California, San Diego 92093-0407
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Abstract

We investigated strain relaxation in (001) InGaAs/GaAs structures using both double and triple axis high resolution x-ray diffraction techniques. We determined diat broadening which is observed in double axis scans stews pnmanly from mosaic spread and not from lattice constant variations in the layer, demonstrating that relaxation is uniform along the growth direction. These observations held for layers with both low and high indium content and extents of relaxation. Triple axis measurements showed that the peak broadening was due exclusively to mosaic spread for the low indium content samples and also confirmed earlier double axis measurements that a crystallographic tilt of the epitaxial layer was attributed to substrate miscut. The ability to distinguish the source of peak broadening and crystallographic tilts makes triple axis diffraction a powerful characterization technique for the study of mismatched epitaxial layers.

Type
III. Applications of Diffraction to Semiconductors and Films
Information
Advances in X-Ray Analysis , Volume 38: Forty-third Annual Conference on Applications of X-ray Analysis , 1994 , pp. 221 - 226
Copyright
Copyright © International Centre for Diffraction Data 1994

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