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Development of μ-Fluorescent and Diffracted X-Ray Spectrometer with a Fine Focused X-Ray Beam and its Application for Ulsi Microanalysis

Published online by Cambridge University Press:  06 March 2019

Naoki Yamamoto*
Affiliation:
Central Research Laboratory, Hitachi Ltd. 1-280, Higashi-koigakubo, Kokubunji-shi, Tokyo 185, Japan
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Abstract

A fluorescent and diffracted X-ray spectrometer with an X-ray sub-micron beam was developed for the analysis of stress, crystal structure, and contamination in micro-regions of ULSIs. A fine glass capillary with a parabolic cross-sectional inner wall surface was made to form a micro X-ray beam. A micro-focus X-ray generator with a membrane-type target was also developed for use with the capillary. The equipment was used to analyze the crystal phases of Ti silicide fine lines and the strains in Al interconnections.

The resistance of Ti-silicide lines increases the line width narrows under about 0.5 μrn. This is because of the growth of crystal phases of TiSi2(C49) and TiSi(B27) with high resistivity ﹛60 to 100 μΩ-cm).

Hillocks of Al grow at line edges when Al layers are compressed by Si substrates and surrounding insulating layers. On the other hand, when the Al is extended by these layers, voids form in the AI lines.

Type
Research Article
Copyright
Copyright © International Centre for Diffraction Data 1995

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References

(1) Yamamoto, N., Iwata, S. and Kume, H.; IEEE, Trans. Electron Devices, ED-34, 607, 1987.Google Scholar
(2) Hinode, K., Owada, N., Nishida, T. and Mukai, K.; J. Vac. Sci. Technol., B5, 518, 1987.Google Scholar
(3) Kirkpatrick, P. and Baze, A. V.; J. Opt. Soc, Am., 38, 756 1948.Google Scholar
(4) Wolter, V. I.; Annalen der Physik, 10, 286 1952.Google Scholar
(5) Cosslett, V. E. and Nixon, W. C.; X-ray Microscopy, (Cambridge Univ, Press, 1960), chap. 45.Google Scholar
(6) Pound, R. V. and Rebka, G. A.; Phys. Rev., 3, 439 1959.Google Scholar
(7) Noyan, I. C. and Cohen, J. B., Residual Stress, (Springer-Verlag, New York, 1987), chap. 5.Google Scholar
(8) Yamamoto, N. and Sakata, S., Jpn. J. Appl. Phys., 28, L2065, 1989.Google Scholar
(9) Lasky, J. B., Nakos, J. S., Cain, O. J., and Geiss, P. J., ; IEEE Trans. Electron Devices, 38, 262 1991.Google Scholar
(10) Sakai, I., Abiko, H., Hirayama, T., Johansson, L. E. G., and Okabe, K.; 1992 Sympo. VLSI Technical Papers, 66, 1992.Google Scholar
(11) Wakabayashi, H., Matsno, T., Saito, Y., Mogami, T. and Kunio, T.; Ext. Abs. 1994 Int. Conf. SSDM, Yokohama, 622, 1994.Google Scholar