Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-25T02:00:59.008Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Structure of Synthetic Diamond and Related Phases

Published online by Cambridge University Press:  06 March 2019

Andrzej R. Badzian
Andrzej R. Badzian*
Affiliation:
Materials Research Laboratory The Pennsylvania State University University Park, PA 16802
Get access

Abstract

This paper examines the relationship between the lattice defects and crystallization process of synthetic diamonds. Diamonds synthesized by high pressure, high temperature methods as well as diamonds vapor deposited under metastable conditions are considered. High pressure crystals precipitated from Ni or Co solutions contain inclusions of metastable carbides and metal atoms distributed throughout a small fraction of the octahedral holes in the diamond lattice.

Diamonds are grown metastabily by a chemical vapor deposition process in which CH4 and H2 are excited by a microwave plasma. Such diamonds are deposited as individual micro-monocrystals or as solid poly crystalline films. The defects in such crystals are related to impurities such as Si and H which produce point defects and tend to nucleate graphite, which can generate planar defects. Nucleation of a diamond phase on β-SiC is also considered, because of the lattice matching between them.

Diamond structure is a prototype of a family of related phases such as cubic BN (sphalerite structure) and solid solutions of diamond and cubic BN, Cubic BN-diamond solid solutions (BN)x(C2)1-x,0<x<l are, in turn, a prototype of AIIIBV-CIV phases, of which (GaP)x(Si2)1-x,0<x<l is an example. Substitution of B-N (or Ga-P) by C-C (or Si-Si) atom pairs at lattice sites is characteristic of these solid solutions.

Type
II. Characterization of Thin Films by XRD and XRF
Information
Advances in X-Ray Analysis , Volume 31: Thirty-Sixth Annual Conference on Applications of X-ray Analysis, August 3-7, 1987 , 1987 , pp. 113 - 128
Copyright
Copyright © International Centre for Diffraction Data 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wedlake, R.J., “Technology of Diamond Growth” in The Properties of Diamond. J.E. Field, ed, 501–538, Academic Press (1979).Google Scholar
2. Bundy, P.P., Strong, H.M. and Wentorf, R.H. Jr.,, “Methods and Mechanisms of Synthetic Diamond Growth” in Chemistry and Physics of Carbon. Walker, P.L. Jr.,, and Thrower, P.A., ed, Vol. 10, 213–263, Marcel Dekker, New York, (1973).Google Scholar
3. Wong, J., Koch, E.F., Hejna, C.J. and Garbaukas, M.F., “Atomic and Micro structural Characterization of Metal Impurities in Synthetic Diamonds,” J. Appl. Phys. 58, 3388–3393, (1985).Google Scholar
4. Badzian, A.R. and Kfokocki, A., “On the Catalytic Growth of Synthetic Diamonds,” J. Crystal Growth 52, 843–847 1981.Google Scholar
5. Post, B., “Multiple Diffraction in Diamond,” Acta Cryst. A32, 292–296 1976.Google Scholar
6. Badzian, A.R., “High Pressure Synthesis of Diamond Type Structure Phases and Their Atomic Structure,” (in Polish), Reports of Institute for Technology of Electronic Materials, Warsaw N. 12, 1–59 1984,Google Scholar
7. Badzian, A. and Kieniewicz-Badzian, T., “New Method for Preparing Cubic Boron Nitride,” in High Pressure Science and Technology. Vodar, B and Maratenau, P.H., eds, Pergamon Press, Oxford, 1087-1091 (1981).Google Scholar
8. Badzian, A., Niemyski, T., Appenheimer, S. and Olkusnik, E., “Graphite-Boron Nitride Solid Solutions by Chemical Vapor Deposition,” in Proceedings of the Third International Conference on Chemical Vapor Deposition, Glaski, F.A., ed, Salt Lake City, April 24-27, 1972, American Nuclear Society, pp. 747–753.Google Scholar
9. Kaner, R.B., Kouvetakis, Y, Warble, C.E., Sattler, M.L. and Barlett, N., “Boron-Carbon-Nitrogen Materials of Graphite-Like Structure,” Mat. Res. Bull, 22, 399–404 1987.Google Scholar
10. Badzian, A., “Cubic Boron Nitride-Diamond Mixed Crystals,” Mat. Res. Bull. 16, 1385–1393 1981.Google Scholar
11. Fedoseev, D.V., Derjaguin, B.V., Varshavskaja, Y.G. and Semienova-Tjan-Shanskaja, A.C., “Crystallization of Diamond.” (in Russian), Nauka, Moscow, pp. 135 (1984).Google Scholar
12. Derjaguin, B.V. and Fedoseev, D.V., “Growth of Diamond and Graphite from Gas Phase.” (in Russian), Nauka, Moscow, pp. 114 (1977).Google Scholar
13. Matsumoto, S., Sato, Y., Kamo, M. and Setaka, N., “Vapor Deposition of Diamond Particles from Methane,” Japanese Journal of Applied Physics 21, L183-L185 (1982).Google Scholar
14. Matsumoto, S., “Chemical Vapor Deposition of Diamond in RF Glow Discharge, Journal of Material Science Letters 4, 600-602 1985.Google Scholar
15. Kamo, M., Sato, Y., Matsumoto, S. andSetaka, N., “Diamond Synthesis from Gas Phase in Microwave Plasma,” Journal of Crystal Growth 62, 642–644 1983.Google Scholar
16. Spitsyn, B.V., Bouilov, L.L. and Derjaguin, B.V., “Vapor Growth of Diamond on Diamond and Other Surfaces,” Journal of Crystal Growth 52, 219–226 1981.Google Scholar
17. Derjaguin, B.V., Bouilov, L.L. and Spitsyn, B.V., “Crystallization and Properties of Diamond Films,” (in Russian), Archiwum Nauki o Materialach 7, 111–119 1986,Google Scholar
18. Badzian, A. and DeVries, R.C., “Crystallization of Diamond From the Gas Phase,” submitted to Mat. Res. Bull.Google Scholar
19. Pate, B.B.. “The Diamond Surfaces: Atomic and Electronic Structure,” Surface Science 165, 83–142 1986.Google Scholar
20. Pandey, K.C., “New Dimerized-Chain Model for the Reconstruction of the Diamond (lll)-(2 x l) Surface,” Phys. Rev. B25, 4338–4341 1982.Google Scholar
21. Vidali, G., Cole, M.W., Weinberg, W.H. and Steele, W.A., “Heluim as a Probe of the (111) Surface of Diamond,” Phys. Rev. Lett. 51, 118–121 1983.Google Scholar
22. Waclawski, B.Y., Pierce, D.T., Swanson, N and Celotta, R.J., “Direct Verification of Hydrogen Termination of the Semiconducting Diamond (111) Surface,” J. Vac. Sci, Technol. 21, 368–370 1982.Google Scholar
23. Matsumoto, S. and Matsui, Y., “Electron Microscopic Observation of Diamond Particles Grown from the Vapor Phase,” Journal of Materials Science 18, 1785–1793 1983.Google Scholar
24. Davis, R.F., Glass, J.T., Lucovski, G. and Bachman, K.J., Annual Report to Office of Naval Research Contract N00014-86-K-0666, June 1987, “Growth Characterization and Device Development in Monocrystalline Diamond Films”.Google Scholar
25. Badzian, A., Badzian, T., Messier, R., Spear, K.E. and R.Roy, “Crystallization of Diamond Crystals and Films by Microwave Assisted C.D.” submitted to Mat, Res. Bull.Google Scholar
26. Serebryanaya, N.R., Losev, V.G., Voronov, O.A., Rakhmanina, A.V. and Yakovlev, E.N., “Morphology of Diamond Crystals Synthesized from Hydrocarbons,” Sov, Phys. Crystallogr, 30, 598–599 1985.Google Scholar
27. Nakazawa, H., Kanazawa, Y., Kamo, M. and Osumi, K., “X-Ray Section Topographs of a Vapor-Grown Diamond Film on a Diamond Substrate,” Thin Solid Films, 151, 199–206 1987.Google Scholar
28. Hosemann, R. and Bagchi, S.V., “Direct Analysis of Diffraction by Matter. North-Holland Publishing Company, Amsterdam (1962).Google Scholar