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Assessment of Multiple Epilayer III-V Compound Semi-Conductors by Synchrotron Radiation Diffractometry

Published online by Cambridge University Press:  06 March 2019

D. K. Bowen ,
S.T. Davies  and
S. Swaminathan
D. K. Bowen
Affiliation:
Department of Engineering University of Warwick Coventry, U.K.
S.T. Davies
Affiliation:
Department of Engineering University of Warwick Coventry, U.K.
S. Swaminathan
Affiliation:
Department of Engineering University of Warwick Coventry, U.K.
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Extract

An extensive programme of characterization of optoelectronic device material has been performed at the Synchrotron Radiation Source, Baresbury Laboratory, in collaboration with Plessey Research, Caswell. The material was grown by Plessey Research by liquid phase epitaxy on InP substrates and had quaternary active layers with, usually, four epilayers in total. Some specimens had graded epilayers. This paper reports use of the methods of double crystal topography, rocking curve analysis and simulation, selective etching and Talysurf measurement in order to develop and assess non-destructive methods of evaluation. The destructive methods above were therefore used in order to test and verify the non-destructive X-ray techniques.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 29: Thirty-Fourth Annual Conference on Applications of X-ray Analysis, August 5-9, 1985 , 1985 , pp. 345 - 352
Copyright
Copyright © International Centre for Diffraction Data 1985

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