Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-22T18:37:51.948Z Has data issue: false hasContentIssue false

4 - RF MEMS Technology

Published online by Cambridge University Press:  20 May 2022

By
Gustavo P. Rehder ,
Ariana L. C. Serrano ,
Marcelo N. P. Carreño ,
Mehmet Kaynak ,
Selin Tolunay Wipf ,
Matthias Wietstruck  and
Alexander Göritz
Edited by
Philippe Ferrari ,
Rolf Jakoby ,
Onur Hamza Karabey ,
Gustavo P. Rehder  and
Holger Maune
Philippe Ferrari
Affiliation:
Université de Grenoble
Rolf Jakoby
Affiliation:
Technische Universität, Darmstadt, Germany
Onur Hamza Karabey
Affiliation:
ALCAN Systems GmbH, Germany
Gustavo P. Rehder
Affiliation:
Escola Politécnica da Universidade de São Paulo
Holger Maune
Affiliation:
Technische Universität, Darmstadt, Germany
Get access

Summary

Several RF MEMS circuits were developed in the late 90s and early 2000s, showing low insertion loss, high linearity with low intermodulation and high power handling. Despite their superior behavior in many aspects, switching and tuning at microwave frequencies is mainly done by FET transistors, varactor diodes or MOS varactors, since their performance is acceptable and encapsulation costs are reduced. However, as the frequency increases into the millimeter wave range, their quality factor is considerably reduced and MEMS switches and varactors becomes a relevant option. In this chapter, the effect of the parasitics in the performance of the MEMS switch at millimeter wave frequencies is analyzed. Guidelines for the millimeter wave switch are presented. A literature review of the narrow-band and broadband switches , as well as phase shifters is also presented. The electromechanical behavior of RF MEMS switches and varactors has been covered extensively in the literature and will not be covered in this chapter.

Keywords

RF MEMSRF MEMS technologyMillimeter-wave MEMS circuitsMillimeter-wave MEMS switchNarrow-band MEMS switchMEMS varactorMillimeter-wave MEMS phase shifter.
Type
Chapter
Information
Reconfigurable Circuits and Technologies for Smart Millimeter-Wave Systems , pp. 201 - 264
Publisher: Cambridge University Press
Print publication year: 2022

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Analog Devices, “The fundamentals of analog devices” revolutionary MEMS switch technology, 2019. Available at: www.analog.com/en/technical-articles/fundamentals-adi-revolutionary-mems-switch-technology.htmlGoogle Scholar
Bell, D., Lu, T., Fleck, N., and Spearing, S., “MEMS actuators and sensors: Observations on their performance and selection for purpose,” Journal of Micromechanics and Microengineering, vol. 15, no. 7, pp. S153–S164, 2005. 10.1088/0960-1317/15/7/022.CrossRefGoogle Scholar
Wietstruck, M., Winkler, W., Göritz, A., Tolunay Wipf, S., Wipf, C., Schmidt, D., Mai, A., and Kaynak, M., “0.13 μm BiCMOS embedded on-chip high-voltage charge pump with stacked BEOL capacitors for RF-MEMS applications,” in Proceedings of the 17th Symposium on RF-MEMS and RF-Microsystems (MEMSWAVE), 2016.Google Scholar
Saias, D., Robert, P., Boret, S., Billard, C., Bouche, G., Belot, D., and Ancey, P., “An above IC MEMS RF switch,” IEEE Journal of Solid-State Circuits, vol. 38, no. 12, pp. 2318–2324, 2003.Google Scholar
Daneshmand, M., Fouladi, S., Mansour, R. R., Lisi, M., and Stajcer, T., “Thermally actuated latching RF MEMS switch and its characteristics,” IEEE Transactions on Microwave Theory and Techniques, vol. 57, no. 12, pp. 3229–3238, 2009.CrossRefGoogle Scholar
Rebeiz, G., RF MEMS: Theory, Design, and Technology, Hoboken, NJ: John Wiley & Sons, 2004.Google Scholar
Varadan, V. K., Kalarickaparambil, J. V., and Jose, K. A., RF MEMS and Their Applications, Hoboken, NJ: John Wiley & Sons, 2003.Google Scholar
De los Santos, H. J., RF MEMS Circuit Design for Wireless Communications, Boston-London: Artech House, 2002.Google Scholar
Lucyszyn, S., Advanced RF MEMS, Cambridge: Cambridge University Press, 2010.CrossRefGoogle Scholar
Timoshenko, S., History of Strength of Materials: With a Brief Account of the History of Theory of Elasticity and Theory of Structures, New York: McGraw-Hill, 1953.Google Scholar
Roark, R., Young, W., Budynas, R., and Sadegh, A., Roark’s Formulas for Stress and Strain. New York: McGraw-Hill, 2012.Google Scholar
Lacroix, B., Pothier, A.,  Crunteanu, A., et al., “Sub-microsecond RF MEMS switched capacitors,” IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 6, pp. 1314–1321, June 2007.CrossRefGoogle Scholar
“RADAR CHIP Products - Silicon Radar GmbH,” Silicon Radar GmbH, 2019. Available at: https://siliconradar.com/products/#120ghz-radar-chipsGoogle Scholar
Heinemann, B., Rücker, H., Barth, R., et al., “SiGe HBT with fx/fmax of 505 GHz/720 GHz,” in 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2016, pp. 3.1.1–3.1.4.Google Scholar
Kaynak, M., Wietstruck, M., Zhang, W., et al., “MEMS module integration into SiGe BiCMOS technology for embedded system applications,” ECS Transactions 41.7 (2011): 191.Google Scholar
Lamy, Y., El Bouayadi, O., Ferrandon, C., et al., “mmW characterization of wafer level passivation for 3D silicon interposer,” in 2013 IEEE 63rd Electronic Components and Technology Conference, Las Vegas, NV, 2013, pp. 1887–1891.Google Scholar
Souchon, F., Reig, B., Dieppedale, C., et al., “Key improvements of the MEMS switch lifetime thanks to a dielectric-free design and contact reliability investigations in hot/cold switching operations,” in 2013 IEEE International Reliability Physics Symposium (IRPS), Anaheim, CA, 2013, pp. 6B.2.1–6B.2.8.4.Google Scholar
“FBK | MST Micro System Technology,” Mst.fbk.eu, 2019. Available at: https://mst.fbk.eu/Google Scholar
Tolunay Wipf, S., Göritz, A.,  Wietstruck, M., Wipf, C., et al. “Thin film wafer level encapsulated RF-MEMS switch for D-Band applications,” in 2016 11th European Microwave Integrated Circuits Conference (EuMIC), London, 2016, pp. 452–455.Google Scholar
Tolunay Wipf, S., Göritz, A., Wietstruck, M., Wipf, C., Tillack, B., Mai, A., and Kaynak, M., “Electromagnetic and small-signal modeling of an encapsulated RF-MEMS switch for D-band applications,” International Journal of Microwave and Wireless Technologies, vol. 9, no. 6, pp. 1271–1278, 2017.Google Scholar
Kaynak, M., Ehwald, K. E., Drews, J., et al., “BEOL embedded RF-MEMS switch for mm-wave applications,” in 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, 2009, pp. 1–4.Google Scholar
Baghchehsaraei, Z. and Oberhammer, J., “Parameter analysis of millimeter-wave waveguide switch based on a MEMS-reconfigurable surface,” IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 12, pp. 4396–4406, Dec. 2013.Google Scholar
Vahabisani, N. and Daneshmand, M., “Monolithic millimeter-wave MEMS waveguide switch,” IEEE Transactions on Microwave Theory and Techniques, vol. 63, no. 2, pp. 340–351, Feb. 2015.CrossRefGoogle Scholar
Reck, T., Jung-Kubiak, C., and Chattopadhyay, G., “A 700-GHz MEMS waveguide switch,” IEEE Transactions on Terahertz Science and Technology, vol. 6, no. 4, pp. 641–643, July 2016.CrossRefGoogle Scholar
Mihailovich, R. E., Kim, M.,  Hacker, J. B., et al., “MEM relay for reconfigurable RF circuits,” IEEE Microwave and Wireless Components Letters, vol. 11, no. 2, pp. 53–55, February 2001.Google Scholar
“Radant MEMS, Inc.” Available at: www.radantmems.com/Google Scholar
Majumder, S., Lampen, J., Morrison, R., and Maciel, J., “A packaged, high-lifetime ohmic MEMS RF switch,” in IEEE MTT-S International Microwave Symposium Digest, 2003, Philadelphia, PA, 2003, vol. 3, pp. 1935–1938.CrossRefGoogle Scholar
Tan, Guan-Leng and Rebeiz, G. M., “A DC-contact MEMS shunt switch,” in IEEE Microwave and Wireless Components Letters, vol. 12, no. 6, pp. 212–214, June 2002.Google Scholar
Bozler, C., Drangmeister, R., Duffy, S., et al., “MEMs microswitch arrays for reconfigurable distributed microwave components,” IEEE Antennas and Propagation Society International Symposium. Transmitting Waves of Progress to the Next Millennium. 2000 Digest. Held in conjunction with: USNC/URSI National Radio Science Meeting, Salt Lake City, UT, 2000, vol. 2, pp. 587–591.Google Scholar
Patel, C. D. and Rebeiz, G. M., “A high-reliability high-linearity high-power RF MEMS metal-contact switch for DC–40-GHz applications,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 10, pp. 3096–3112, Oct. 2012.Google Scholar
Hyman, D., “Wideband DC-contact MEMS series switch,” Micro Nano Lett., vol. 3, no. 3, p. 66–69(3), Sept. 2008.Google Scholar
Mercier, D., Charvet, P. L., Berruyer, P., et al., “A DC to 100 GHz high performance ohmic shunt switch,” 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), Fort Worth, TX, 2004, vol. 3, pp. 1931–1934.Google Scholar
Hyman, D., Lam, J., Warneke, B., et al., “Surface-micromachined RF MEMs switches on GaAs substrates,” International Journal of RF Microwave and Computer Aided Engineering, vol. 9, no. 4, pp. 348–361, July 1999.Google Scholar
Goldsmith, C. L., Yao, Zhimin, Eshelman, S., and Denniston, D., “Performance of low-loss RF MEMS capacitive switches,” IEEE Microwave and Guided Wave Letters, vol. 8, no. 8, pp. 269–271, Aug. 1998.CrossRefGoogle Scholar
Uno, Y., Narise, K., Masuda, T., et al., “Development of SPDT-structured RF MEMS switch,” TRANSDUCERS 2009 – 2009 International Solid-State Sensors, Actuators and Microsystems Conference, Denver, CO, 2009, pp. 541–544.CrossRefGoogle Scholar
Muldavin, J. B. and Rebeiz, G. M., “High-isolation CPW MEMS shunt switches. 1. Modeling,” IEEE Transactions on Microwave Theory and Techniques, vol. 48, no. 6, pp. 1045–1052, June 2000.CrossRefGoogle Scholar
Hyman, D. and Mehregany, M., “Contact physics of gold microcontacts for MEMS switches,” in Electrical Contacts – 1998. Proceedings of the Forty-Fourth IEEE Holm Conference on Electrical Contacts (Cat. No.98CB36238), Arlington, VA, 1998, pp. 133–140.CrossRefGoogle Scholar
Coutu, R., Electrostatic Radio Frequency (RF) Microelectromechanical Systems (MEMS) Switches with Metal Alloy Electric Contacts, PhD diss., Air Force Institute of Technology, 2004.CrossRefGoogle Scholar
Schimkat, J., “Contact materials for microrelays,” in Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176, Heidelberg, Germany, 1998, pp. 190–194.Google Scholar
Park, J. Y., Kim, G. H., Chung, K. W., and Bu, J. U., “Electroplated rf MEMS capacitive switches,” in Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308), Miyazaki, Japan, 2000, pp. 639–644.Google Scholar
Liu, Yu, Taylor, T. R., Speck, J. S., and York, R. A., “High-isolation BST-MEMS switches,” in 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), Seattle, WA, 2002, vol. 1, pp. 227–230.Google Scholar
Chang, C. H., Qian, J. Y.,  Cetiner, B. A., et al., “RF MEMS capacitive switches fabricated with HDICP CVD SiN/sub x/,” in 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), Seattle, WA, 2002, vol. 1, pp. 231–234.CrossRefGoogle Scholar
De Silva, P., Vaughan, C., Frear, D., et al., “Motorola MEMS switch technology for high frequency applications,” in 2001 Microelectromechanical Systems Conference (Cat. No. 01EX521), Berkeley, CA, 2001, pp. 22–24.Google Scholar
Muldavin, J. B. and Rebeiz, G. M., “All-metal high-isolation series and series/shunt MEMS switches,” IEEE Microwave and Wireless Components Letters, vol. 11, no. 9, pp. 373–375, Sept. 2001.Google Scholar
Park, Jae-Hyoung, Lee, Sanghyo, Kim, Jung-Mu, Kim, Hong-Teuk, Kwon, Youngwoo, and Kim, Yong-Kweon, “Reconfigurable millimeter-wave filters using CPW-based periodic structures with novel multiple-contact MEMS switches,” Journal of Microelectromechanical Systems, vol. 14, no. 3, pp. 456–463, June 2005.Google Scholar
Purtova, T., RFMEMS Periodic Structures: Modelling, Components and Circuits,” PhD diss., Universität Ulm, 2012.Google Scholar
Kaynak, M., Wietstruck, M., Zhang, W., et al., “Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads,” in 2012 IEEE/MTT-S International Microwave Symposium Digest, Montreal, QC, 2012, pp. 1–3.Google Scholar
Kaynak, M., Valenta, V., Schumacher, H., and Tillack, B., “MEMS module integration into SiGe BiCMOS technology for embedded system applications,” in 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Portland, OR, 2012, pp. 1–7.Google Scholar
Tolunay Wipf, S., Göritz, A., Wietstruck, M., Wipf, C., Tillack, B., and Kaynak, M., “D–Band RF–MEMS SPDT Switch in a 0.13 µm SiGe BiCMOS Technology,” IEEE Microwave and Wireless Components Letters, vol. 26, no. 12, pp. 1002–1004, Dec. 2016.Google Scholar
Tolunay Wipf, S., Göritz, A., Wipf, C.,  Wietstruck, M., et al., “240 GHz RF-MEMS switch in a 0.13 μm SiGe BiCMOS Technology,” in 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Miami, FL, 2017, pp. 54–57.CrossRefGoogle Scholar
Mercier, D., Orlianges, J. C., Delage, T., et al., “Millimeter-wave tune-all bandpass filters,” IEEE Transactions on Microwave Theory and Techniques, vol. 52, no. 4, pp. 1175–1181, Apr. 2004.CrossRefGoogle Scholar
Lu, Y., Katehi, L. P. B., and Peroulis, D., “High-power MEMS varactors and impedance tuners for millimeter-wave applications,” IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 11, pp. 3672–3678, Nov. 2005.Google Scholar
Pu, S., A Micromachined Zipping Variable Capacitor,” PhD diss., University of Southampton, 2010.Google Scholar
Muldavin, J., Bozler, C., Rabe, S., and Keast, C., “Large tuning range analog and multi-bit MEMS varactors,” in 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), Fort Worth, TX, 2004, vol. 3, pp. 1919–1922.CrossRefGoogle Scholar
Dussopt, L. and Rebeiz, G. M., “High-Q millimeter-wave MEMS varactors: extended tuning range and discrete-position designs,” in 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), Seattle, WA, 2002, vol. 2, pp. 1205–1208 .CrossRefGoogle Scholar
McFeetors, G. and Okoniewski, M., “Performance and operation of stressed dual-gap RF MEMS varactors,” in 2006 European Microwave Conference, Manchester, 2006, pp. 1064–1067.CrossRefGoogle Scholar
Lu, Y., Katehi, L. P. B., and Peroulis, D., “High-power MEMS varactors and impedance tuners for millimeter-wave applications,” IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 11, pp. 3672–3678, Nov. 2005.Google Scholar
Peroulis, D. and Katehi, L. P. B., “Electrostatically-tunable analog RF MEMS varactors with measured capacitance range of 300%,” in IEEE MTT-S International Microwave Symposium Digest, 2003, Philadelphia, PA, 2003, vol. 3, pp. 1793–1796.Google Scholar
Rehder, G. P., Mir, S., Rufer, L., Simeu, E., and Nguyen, H. N., “Low frequency test for RF MEMS switches,” in 2010 Fifth IEEE International Symposium on Electronic Design, Test & Applications, Ho Chi Minh City, 2010, pp. 350–354.Google Scholar
WiSpry. “Tunable Antenna Technology,” 2019. Available at: http://wispry.com/Google Scholar
Cavendish-kinetics.com, “Cavendish kinetics – maximum RF performance,” 2019. Available at: www.cavendish-kinetics.comGoogle Scholar
Shen, Hui, Gong, Songbin, and Barker, N. S., “DC-contact RF MEMS switches using thin-film cantilevers,” in 2008 European Microwave Integrated Circuit Conference, Amsterdam, 2008, pp. 382–385.CrossRefGoogle Scholar
Chung, D. J., Polcawich, R. G., Judy, D., Pulskamp, J., and Papapolymerou, J., “A SP2T and a SP4T switch using low loss piezoelectric MEMS,” in 2008 IEEE MTT-S International Microwave Symposium Digest, Atlanta, GA, 2008, pp. 21–24.Google Scholar
Lee, Jaewoo, Han Je, Chang, Kang, Sungweon, and Choi, Chang-Auck, “A low-loss single-pole six-throw switch based on compact RF MEMS switches,” in IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 11, pp. 3335–3344, Nov. 2005.Google Scholar
Gong, S., Shen, H. and Barker, N. S., “A 60-GHz 2-bit switched-line phase shifter using SP4T RF-MEMS switches,” IEEE Transactions on Microwave Theory and Techniques, vol. 59, no. 4, pp. 894–900, April 2011.Google Scholar
Kim, M., Hacker, J. B., Mihailovich, R. E., and DeNatale, J. F., “A DC-to-40 GHz four-bit RF MEMS true-time delay network,” IEEE Microwave and Wireless Components Letters, vol. 11, no. 2, pp. 56–58, Feb. 2001.CrossRefGoogle Scholar
Tan, Guan-Leng, Mihailovich, R. E., Hacker, J. B., DeNatale, J. F., and Rebeiz, G. M., “Low-loss 2- and 4-bit TTD MEMS phase shifters based on SP4T switches,” IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 1, pp. 297–304, Jan. 2003.Google Scholar
Gong, S., Shen, H., and Barker, N. S., “A 60-GHz 2-bit switched-line phasesshifter using SP4T RF-MEMS switches,” IEEE Transactions on Microwave Theory and Techniques, vol. 59, no. 4, pp. 894–900, Apr. 2011.Google Scholar
Hung, Juo-Jung, Dussopt, L., and Rebeiz, G. M., “Distributed 2- and 3-bit W-band MEMS phase shifters on glass substrates,” IEEE Transactions on Microwave Theory and Techniques, vol. 52, no. 2, pp. 600–606, Feb. 2004.Google Scholar
Kim, Hong-Teuk, Park, J. H.,  Lee, S., et al., “V-band 2-b and 4-b low-loss and low-voltage distributed MEMS digital phase shifter using metal-air-metal capacitors,” in IEEE Transactions on Microwave Theory and Techniques, vol. 50, no. 12, pp. 2918–2923, Dec. 2002.Google Scholar
Rehder, G., Vo, T., and Ferrari, P., “Development of a slow-wave MEMS phase shifter on CMOS technology for millimeter wave frequencies,” Microelectronic Engineering, vol. 90, pp. 19–22, 2012.Google Scholar
Bautista, A., Franc, A. L., and Ferrari, P., “An accurate parametric electrical model for slow-wave CPW,” in 2015 IEEE MTT-S International Microwave Symposium, Phoenix, AZ, 2015, pp. 1–4.Google Scholar
Verona, M., Rehder, G. P., Serrano, A. L. C., Carreño, M. N. P., and Ferrari, P., “Slow-wave distributed MEMS phase shifter in CMOS for millimeter-wave applications,” in 2014 44th European Microwave Conference, Rome, 2014, pp. 211–214.Google Scholar
Chang, C. C., Chen, Y., and Hsieh, S., “A V-band three-state phase shifter in CMOS-MEMS technology,” IEEE Microwave and Wireless Components Letters, vol. 23, no. 5, pp. 264–266, May 2013.Google Scholar
De Paolis, R., Coccetti, F., Payan, S., Maglione, M., and Guegan, G., “Characterization of ferroelectric BST MIM capacitors up to 65 GHz for a compact phase shifter at 60 GHz,” 2014 44th European Microwave Conference, Rome, 2014, pp. 492–495.Google Scholar
Krishnaswamy, H., Valdes-Garcia, A., and Lai, J., “A silicon-based, all-passive, 60 GHz, 4-element, phased-array beamformer featuring a differential, reflection-type phase shifter,” in 2010 IEEE International Symposium on Phased Array Systems and Technology, Waltham, MA, 2010, pp. 225–232.Google Scholar
Tabesh, M., Arbabian, A., and Niknejad, A., “60GHz low-loss compact phase shifters using a transformer-based hybrid in 65nm CMOS,” in 2011 IEEE Custom Integrated Circuits Conference (CICC), San Jose, CA, 2011, pp. 1–4.Google Scholar
Bulja, S., Mirshekar-Syahkal, D., Yazdanpanahi, M., James, R., Day, S. E., and Fernández, F. A., “Liquid crystal based phase shifters in 60 GHz band,” in The 3rd European Wireless Technology Conference, Paris, 2010, pp. 37–40.Google Scholar
Fritzsch, C., Giacomozzi, F., Karabey, O. H., et al., “Continuously tunable W-band phase shifter based on liquid crystals and MEMS technology,” in 2011 6th European Microwave Integrated Circuit Conference, Manchester, 2011, pp. 522–525.Google Scholar
Franc, A. L., Karabey, O. H., Rehder, G., Pistono, E., Jakoby, R., and Ferrari, P., “Compact and broadband millimeter-wave electrically tunable phase shifter combining slow-wave effect with liquid crystal technology,” IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 11, pp. 3905–3915, Nov. 2013.Google Scholar
Quemerais, T., Gloria, D., Golanski, D., and Bouvot, S., “High-Q MOS varactors for millimeter-wave applications in CMOS 28-nm FDSOI,” in IEEE Electron Device Letters, vol. 36, no. 2, pp. 87–89, Feb. 2015.CrossRefGoogle Scholar
Velu, G., Blary, K., Burgnies, L., et al., “A 310/spl deg//3.6-dB K-band phaseshifter using paraelectric BST thin films,” IEEE Microwave and Wireless Components Letters, vol. 16, no. 2, pp. 87–89, Feb. 2006.Google Scholar
Gaebler, A., Goelden, F., Manabe, A., Goebel, M., Mueller, S., and Jakoby, R., “Investigation of high performance transmission line phase shifters based on liquid crystal,” in 2009 European Microwave Conference (EuMC), Rome, 2009, pp. 594–597.CrossRefGoogle Scholar
Ulusoy, Ç., Kaynak, M., Purtova, T., Tillack, B., and Schumacher, H., “A 60 to 77 GHz switchable LNA in an RF-MEMS embedded BiCMOS technology,” IEEE Microwave and Wireless Components Letters, vol. 22, no. 8, pp. 430–432, Aug. 2012.CrossRefGoogle Scholar
Liu, G., Kaynak, M., Purtova, T., Ulusoy, A. Ç., Tillack, B., and Schumacher, H., “Dual-band millimeter-wave VCO with embedded RF-MEMS switch module in BiCMOS technology,” in 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Santa Clara, CA, 2012, pp. 175–178.Google Scholar
Lee, Sanghyo, Kim, Jong-Man, Kim, Jung-Mu, Kim, Yong-Kweon, and Kwon, Youngwoo, “Millimeter-wave MEMS tunable low pass filter with reconfigurable series inductors and capacitive shunt switches,” IEEE Microwave and Wireless Components Letters, vol. 15, no. 10, pp. 691–693, Oct. 2005.Google Scholar
Sor, J., Qian, Y., and Itoh, T., “Miniature low-loss CPW periodic structures for filter applications,” IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 12, pp. 2336–2341, Dec. 2001.Google Scholar
Park, Jae-Hyoung, Lee, Sanghyo, Kim, Jung-Mu, Kim, Hong-Teuk, Kwon, Youngwoo, and Kim, Yong-Kweon, “Reconfigurable millimeter-wave filters using CPW-based periodic structures with novel multiple-contact MEMS switches,” Journal of Microelectromechanical Systems, vol. 14, no. 3, pp. 456–463, June 2005.Google Scholar
Kim, Hong-Teuk, Park, Jae-Hyoung, Kim, Yong-Kweon, and Kwon, Youngwoo, “Low-loss and compact V-band MEMS-based analog tunable bandpass filters,” IEEE Microwave and Wireless Components Letters, vol. 12, no. 11, pp. 432–434, Nov. 2002.Google Scholar

Save book to Kindle

To save this book to your Kindle, first ensure [email protected] is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Available formats
×

Save book to Dropbox

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Dropbox.

Available formats
×

Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

Available formats
×