Book contents
- Frontmatter
- Contents
- Preface
- 1 Theoretical methods used to calculate the electronic structure and properties of refractory compounds
- 2 Electronic structure, chemical bonding and properties of binary carbides
- 3 Electronic structure and interatomic interactions in transition metal nitrides
- 4 Electronic structure and properties of nonstoichiometric carbides and nitrides
- 5 s- and p-element impurities in carbides, nitrides and their solid solutions
- 6 Hydrogen-containing carbides and nitrides and their solid solutions
- 7 Influence of metal sublattice doping on electronic properties of carbides and nitrides
- 8 Electronic structure of the surfaces of carbides and nitrides
- References
- Index
7 - Influence of metal sublattice doping on electronic properties of carbides and nitrides
Published online by Cambridge University Press: 30 March 2010
- Frontmatter
- Contents
- Preface
- 1 Theoretical methods used to calculate the electronic structure and properties of refractory compounds
- 2 Electronic structure, chemical bonding and properties of binary carbides
- 3 Electronic structure and interatomic interactions in transition metal nitrides
- 4 Electronic structure and properties of nonstoichiometric carbides and nitrides
- 5 s- and p-element impurities in carbides, nitrides and their solid solutions
- 6 Hydrogen-containing carbides and nitrides and their solid solutions
- 7 Influence of metal sublattice doping on electronic properties of carbides and nitrides
- 8 Electronic structure of the surfaces of carbides and nitrides
- References
- Index
Summary
The effects on the properties of transition metal carbides and nitrides produced by metal sublattice doping have been studied for quite an extended period. So far, large groups of ternary (and more complex) carbide and nitride alloys of the MxM1−x(C,N) type, where M, M are metals, have been synthesised (see Goldschmidt (1967) or Samsonov, Upadkhaya and Neshpor (1974)). In this chapter we review the results of researches on the electronic structure and interatomic bonding in such solid solutions.
Isolated 3d- and 4d-metal impurities in carbides and nitrides
The most studied of these so far is the electronic structure of isolated impurities of 3d- and 4d-metals in cubic carbides and nitrides of Sc, Ti, V, Zr, Nb (see Ivanovsky (1988) and Ivanovsky et al (1987a,b, 1988a,b, 1989)). They have been calculated by the LMTO–GF method.
As an example, Fig. 7.1 presents the LDOSs of 3d-metal impurities in TiC with a Bl crystal structure (Ivanovsky et al, 1988a). It is seen that the LDOSs of impurities are defined by the peculiarities of the interaction between the impurities and the matrix. The LDOSs may differ considerably for elements at the beginning and end of the d series. In the case of the ma–va subgroup d-metals, whose carbides and nitrides form homogeneous solid solutions with TiC, the shapes of the impurity LDOS and the matrix DOS are rather similar. In such ternary alloys a common valence band consisting of the nonmetal 2p-orbitals and d- and s-orbitals of both types of metal atom is formed.
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- Chapter
- Information
- Electronic Structure of Refractory Carbides and Nitrides , pp. 176 - 196Publisher: Cambridge University PressPrint publication year: 1994