Book contents
- Frontmatter
- Contents
- List of contributors
- Preface
- 1 High-resolution transmission electron microscopy
- 2 Holography in the transmission electron microscope
- 3 Microanalysis by scanning transmission electron microscopy
- 4 Specimen preparation for transmission electron microscopy
- 5 Low-temperature scanning electron microscopy
- 6 Scanning tunneling microscopy
- 7 Identification of new superconducting compounds by electron microscopy
- 8 Valence band electron energy loss spectroscopy (EELS) of oxide superconductors
- 9 Investigation of charge distribution in Bi2Sr2CaCu2O8 and YBa2Cu3O7
- 10 Grain boundaries in high Tc materials: transport properties and structure
- 11 The atomic structure and carrier concentration at grain boundaries in YBa2Cu3O7–δ
- 12 Microstructures in superconducting YBa2Cu3O7 thin films
- 13 Investigations on the microstructure of YBa2Cu3O7 thin-film edge Josephson junctions by high-resolution electron microscopy
- 14 Controlling the structure and properties of high Tc thin-film devices
2 - Holography in the transmission electron microscope
Published online by Cambridge University Press: 21 August 2009
- Frontmatter
- Contents
- List of contributors
- Preface
- 1 High-resolution transmission electron microscopy
- 2 Holography in the transmission electron microscope
- 3 Microanalysis by scanning transmission electron microscopy
- 4 Specimen preparation for transmission electron microscopy
- 5 Low-temperature scanning electron microscopy
- 6 Scanning tunneling microscopy
- 7 Identification of new superconducting compounds by electron microscopy
- 8 Valence band electron energy loss spectroscopy (EELS) of oxide superconductors
- 9 Investigation of charge distribution in Bi2Sr2CaCu2O8 and YBa2Cu3O7
- 10 Grain boundaries in high Tc materials: transport properties and structure
- 11 The atomic structure and carrier concentration at grain boundaries in YBa2Cu3O7–δ
- 12 Microstructures in superconducting YBa2Cu3O7 thin films
- 13 Investigations on the microstructure of YBa2Cu3O7 thin-film edge Josephson junctions by high-resolution electron microscopy
- 14 Controlling the structure and properties of high Tc thin-film devices
Summary
Introduction
In conventional electron microscopy, specimens are observed using the intensity of an electron beam. However, in electron holography [2.1], the phase as well as the intensity of the electron beam transmitted through a specimen is first recorded on film as an interference pattern, which is called a ‘hologram’. The illumination of a laser beam onto this hologram then produces an optical image of a specimen in three dimensions. To be more exact, the wavefronts of the scattered electron beam are reproduced as wavefronts of a laser beam. Although the optical wavelength is 105 times larger than the electron wavelength, the two wavefronts are otherwise alike.
Once the image is completely transferred from inside the electron microscope onto an optical bench, versatile optical techniques can be used for electron optics. For example, the effect of the spherical aberration in the objective lens of the electron microscope can be compensated for to improve the resolution which was the original objective for which Gabor invented holography [2.1]. This is done by optically adding aberration with an opposite sign. The phase distribution of the electron beam can also be drawn on an electron micrograph by using an optical interferometer in the optical reconstruction stage of electron holography [2.2]. An electron microscope with an electron biprism [2.3] can provide an interferogram, but not a contour map nor a phase-amplified interference micrograph.
These possibilities were opened up by the development of a ‘coherent’ field-emission electron beam [2.4] which is indispensable for forming high-quality electron holograms.
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- Publisher: Cambridge University PressPrint publication year: 2000