L’Équipe Mobile d’Argelès Psychiatrique (EMAP) a vu le jour le 1er septembre 2011. Elle a été financée dans un cadre expérimental, par l’Agence Régionale de Santé du Languedoc-Roussillon. Le projet s’inscrivait dans les travaux du Conseil Local de Santé Mentale (CLSM) d’Argelès-sur-Mer (66700). Il faisait suite à plusieurs constats. Pour de multiples raisons, et notamment du fait de l’augmentation considérable des soins ambulatoires, le nombre des visites à domicile a régulièrement diminué ces dernières années et s’est progressivement recentré sur le suivi de patients connus. D’autre part, il existe un nombre d’hospitalisation d’office historiquement bien plus élevé dans les Pyrénées Orientales que la moyenne nationale (88 hospitalisations d’office pour 100 000 habitants âgés de 20 ans et plus dans les PO contre 25 pour 100 000 habitants au niveau national en 2007. Ce nombre était de 83 pour notre secteur géographique). Les représentants des usagers et des familles étaient très en demande d’interventions rapides dans la communauté. Cette attente faisait écho à celle d’un grand nombre des partenaires du réseau sanitaire (médecins généralistes) mais également social ou médicosocial pour évaluer certaines situations orientées par défaut vers le service des urgences psychiatriques au centre hospitalier de Perpignan. Malgré les efforts de communication et d’information entrepris de longue date, il était noté, dans la pratique quotidienne, l’insuffisance des liens avec les services municipaux, la police, la gendarmerie, les pompiers et parfois les services sociaux pour prévenir les situations de crise. Enfin, l’existence d’une Équipe Mobile Psychiatrie Précarité rattachée au service depuis une quinzaine d’années permettait de s’appuyer sur une expérience déjà solide. Par opposition à notre EMPP qui est intersectorielle, l’EMAP s’est inscrite d’emblée dans une dimension sectorielle, rattachée à part entière à un CMP desservant un territoire de 40 000 habitants. Il s’agit d’une équipe rapidement mobilisable, à la demande des patients, des familles ou des différents partenaires du champ médical, social et judiciaire pour anticiper et évaluer les situations de crise de nature psychiatrique. Au-delà de l’évaluation, elle organise, si besoin, les soins de la manière la plus adaptée. Cette équipe spécialisée, pluridisciplinaire, va :

– développer les relations de réseau entre des acteurs pouvant recevoir les mêmes publics mais se connaissant peu ;

– intervenir sur signalement pour évaluer les situations de crise susceptibles de relever de réponses psychiatriques ou, ce qui est préférable, pouvant les anticiper.

L’expérience des deux premières années de fonctionnement permet de retenir un bilan intéressant, notamment la diminution très sensible des hospitalisations en SDRE sur l’aire géographique desservie et une complémentarité naturelle avec l’activité de CMP classique. Ce bilan sera détaillé dans cette publication.

Far-from-equilibrium systems are ubiquitous in nature. They are also rich in terms of diversity and complexity. Therefore, it is an intellectual challenge to be able to understand the physics of far-from-equilibrium phenomena. In this article, we revisit a standard tabletop experiment, the Rayleigh–Bénard convection, to explore some fundamental questions and present a new perspective from a first-principles point of view. We address how nonequilibrium fluctuations differ from equilibrium fluctuations, how emergence of order out of equilibrium breaks symmetries in the system, and how free energy of a system gets locally bifurcated to operate a Carnot-like engine to maintain order. The exploration and investigation of these nontrivial questions are the focus of this article.

Ce3+ ions in ceria nanoparticles (NPs) play a role as reactive sites in the adsorption of silicate anions. However, the limited concentration of Ce3+ ions in ceria NPs remains a major challenge in this regard. Herein, we report a simple strategy to synthesize Ce3+-enriched core–shell ceria NPs for enhanced adsorption of silicate anions. To increase the overall Ce3+ concentration, a shell layer is composed of Ce3+-rich ultrasmall ceria NPs approximately 5 nm in size. The Ce3+ concentration of such core–shell ceria NPs is increased by 12.7–17.1% relative to that of the pristine ceria NPs, resulting in increased adsorption of silicate anions. The Freundlich model fits the observed adsorption isotherm well and the constants of adsorption capacity (KF) and adsorption intensity (1/n) indicate higher adsorption affinity of the core–shell ceria NPs for silicate anions. We attribute these improvements to the increased Ce3+ concentration contributed by the ultrasmall ceria coating. This strategy can be used for enhancing the reactivity of ceria materials.

As the scaling of the device dimensions in CMOS devices runs into physical limitations, new materials beyond Si with high electron and hole mobilities such as Ge, SiGe, and III-V materials are introduced. Challenges of CMP for these materials are reviewed in this paper. First we discussed the challenge of the new integration schemes to CMP. Loading effects can result in different growth rates for varying feature sizes, which results in a critical dimension dependent overburden. This makes it more difficult to meet the targets of the CMP process with respect to oxide loss and Ge/SiGe/III-V dishing. Secondly we discuss the challenge for the reduction of the defects during CMP for these new materials. Finally the challenge that is relevant especially for the introduction of III-V materials is studied. During the polishing of III-V materials, toxic gases as well as III-V containing liquid waste will be created. The chemical mechanism of the waste control is discussed.

The CMP challenges for advanced technology nodes are discussed. Global and local uniformity challenges and their cumulative effects are presented. Uniformity improvements for advanced node integration were achieved through slurry, pad and platen optimization, innovative integration schemes, the reduction of incoming variation and the reduction of cumulative effects. We discuss reduction of typical CMP defect types. Defects resulting from simple mechanisms (foreign material, polish residues) and those resulting from chemical and physical interactions (corrosion, chemical attack, scratches, physical migration) and strategies for control are studied. Defectivity reduction measures include new post-CMP clean chemicals, new slurries and pads and reduction of incoming defectivity. Finally we discuss an observed tradeoff between good defectivity and good uniformity.

The use of ceria abrasives in the chemical mechanical polishing (CMP) of glass allows us to prepare extremely smooth surfaces because it aides both the chemical and mechanical aspects of the polishing process. The mechanism of CMP has remained vague, but the redox of Ce4+/Ce3+ would play a major role for the formation of hydration layer by the chemical factors of CMP. This redox accompanies the process of the charge transfer at glass/slurry interface. Electron charge carrier would be important role in chemical polishing if the redox reaction occurs during polishing. We then prepared the polishing model that it is possible to estimate slurry resistivity and the interfacial area specific resistance (ASR). The effects of abrasive compositions and slurry solution on chemical factor of CMP were investigated to clarify CMP mechanism. The hydration layer forms as a result of the shear stress during polishing but is independent of polishing loads. The amount of hydration layer as well as removal rate was increasing with increasing lanthanum concentration dissolved in ceria lattice. Small amount addition of NH4NO3 increase electron charge carrier density in slurry and improves removal rate, but excess addition inhibited hydration reaction by steric hindrance.

The biocompatibility of an implant material depends on the bulk physical properties in addition to the surface properties. In biomedical engineering and industry Ti and Ti-alloys are very popular biological implant material for their bulk physical properties and strength to weight ratio resembling those of nature bone. It is possible to modify the surface properties of titanium for enhanced surface biocompatibility. The main objective of the this study is to engineer a smart Ti-based prosthesis surface by self induced chemically modified titanium oxide nano-film by the chemical mechanical polishing process (CMP). This new process applied on bio-implants aims at significantly reducing the out-diffusion of Ti and other metallic impurities from prosthesis in contact with body fluids and tissue and simultaneously enhancing the surface mechanical, chemical and biological properties. CMP technique enables the growth of a thicker and denser self-protective native oxide on Ti and Ti alloy samples, while simultaneously inducing a controlled surface roughness. It is demonstrated that the Ti based dental implants with self-protective oxide induced surfaces help minimize chemical and bacterial reactivity in addition to Ti ion dissolution while promoting their biocompatibility through surface patterning. The studied self-protective oxide films can also be utilized for many additional applications including bio-sensors.

The continuous trend of achieving more complex microelectronics with smaller nodes yet larger wafer sizes in microelectronics manufacturing lead to aggressive development requirements for chemical mechanical planarization (CMP) process. Particularly, beyond the 14 nm technology the development needs made it a must to introduce high mobility channel materials such as Ge. CMP is an enabler for integration of these new materials into future devices. In this study, we implemented a design of experiment (DOE) methodology in order to understand the optimized CMP slurry parameters such as optimal concentration of surface active agent (sodium dodecyl sulfate-SDS), concentration of abrasive particles and pH from the viewpoint of high removal rate and selectivity while maintaining a defect free surface finish. The responses examined were particle size distribution (slurry stability), zeta potential, material removal rate (MRR) and the surface defectivity as a function of the selected design variables. The impact of fumed silica particle loadings, oxidizer (H2O2) concentration, SDS surfactant concentration and pH were analyzed on Ge/silica selectivity through material removal rate (MRR) surface roughness and defectivity analyses.

In this article I examine changes in the election manifestos of Japan's Liberal Democratic Party. While the existing literature agrees that the LDP's policy platform has changed considerably since the introduction of the new election system in the 1990s, their analysis focuses on material policies such as pork barrel and welfare. Postmaterialist policies such as environmental protection have hardly been discussed, even though they have been relevant since pollution swept progressive mayors into power in the 1960s. I examine election platforms from 1956 through 2013, and argue that the LDP has carefully adjusted its policy mix by putting a greater emphasis on postmaterialist policies. My analysis also shows that while electoral reform has had an impact on the policy balance between postmaterialist and materialist policies as well as clientelist and programmatic policies, these changes are not linear, but vary from decade to decade.

Solid-state microcellular foaming (SSMF) process was used to produce porous chemical mechanical polishing (CMP) pads in a variety of pore size and porosity range, using a variety of thermoplastic polyurethane (TPU) resin hardness. By controlling the pore size, porosity, and pad hardness, one is able to manufacture CMP pads that offer tunable pad properties. A brief introduction to the SSMF manufacturing process and thereby, unique microstructures created is first addressed followed by inner layer dielectric (ILD) CMP results, describing the effects of top TPU foam sheet properties, such as hardness, pore size, and porosity on ILD removal rate (RR) and wafer defects. Softer TPU-based porous pads showed significantly lower wafer scratch counts, while only a moderate increase in the ILD RR was seen with increasing resin hardness for similar pore size and porosity pads. Pore size has insignificant influence on wafer defect count but has significant influence on the ILD RR profile. CMP pads made from small pore size foams cause a nonflat RR profile.

In this paper, a novel set of macros with line/space width from 128nm/128nm, 64nm/64nm to 32nm/32nm was designed and installed on 20nm technology-node hardware. The pitch-dependent pad erosion post Cu CMP was studied by atomic-force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) quantitatively on these macros. Two methods were investigated to reduce the difference between pitch- and density-induced CMP non-uniformity. The first is using new scheme of partial Cu plating process followed by SiCNH insulator deposition and then CMP. The second is through the selection of slurries and pads. Both results are discussed in this paper.

Fabrication of integrated circuits is a multi-step process that involves chemical mechanical polishing (CMP) for planarizing the deposited layers. Although dependent on the consumables and machine operating conditions, most CMP researchers assume that the polishing occurs in the mixedlubrication regime, where the applied load on the wafer is supported by the hydrodynamic slurry pressure and the contact stress generated during the pad-wafer contact. The particle augmented mixed lubrication (PAML) approach has been employed by Terrell and Higgs (2009) as a high-fidelity asperity-scale mixed-lubrication CMP model. The current work introduces a more computationally efficient wafer-scale PAML model, called PAML-lite, which employs a two-dimensional average flow Reynold's Equation incorporating spatial dependence of entrainment velocities to model the hydrodynamic pressure. The contact mechanics are modeled using a Winkler elastic foundation in cylindrical polar coordinates. The resulting slurry hydrodynamic pressure distribution and contact stress are used to determine the equilibrium configuration of the system in the form of a nominal clearance and rolling and pitch angles. Local and wafer scale material removal rate (MRR) is predicted by assuming a uniform distribution of particle sizes. The prediction of PAML-lite were then benchmarked against experimental results. Upon verification, parametric studies were conducted to understand the effect of some unexplored CMP parameters.

The “pad-in-a-bottle” (PIB) approach to planarization is a non-traditional chemical mechanical polishing (CMP) process in which slurry containing polymer beads is used. The approach is hypothesized to be able to perform polishing by mixing polymer beads with similar chemical and mechanical properties as pad asperities into the slurry to provide force application and polishing contacts, so that a traditional CMP pad is not needed. Pad-in-a-bottle could provide predictable and controllable mechanical contacts through bead size control, which could substantially reduce process variability. Pad-in-a-bottle also has the potential to reduce the CMP consumable cost. In this work, we propose a physical model to understand the behavior of the pad-in-a-bottle approach and estimate the relationship of applied pressure and material removal rate in this variant of CMP. Two specific cases of polymer bead formation are considered in our modeling work, bead packing and bead stacking. Model prediction shows that the two bead formation cases generate distinctly different polishing mechanisms: material removal is applied pressure driven in bead packing, but contact event driven in bead stacking. The physical model suggests that in future experiments or applications of pad-in-a-bottle, a polymer bead size distribution or shape variation may be needed to achieve efficient material removal.

Additive-abrasive interactions in chemical-mechanical planarization (CMP) slurries are investigated using fluorescence correlation spectroscopy (FCS). The FCS technique provides quantitative determinations of the interaction between additives and abrasive particles by characterizing the competitive adsorption of the additive and a fluorescent probe molecule by an abrasive particle. Adsorption of the CMP additives glycine and benzotriazole (BTA) on precipitated and sol-gel colloidal silica abrasives are characterized. Significant differences in the fluorescent probe’s adsorption to the different silica abrasives in the presence of the additives suggest surface chemistry differences between the different types of silica. Extensions of the analysis of FCS data are proposed for improving the quantitative determination of the competitive adsorption of fluorescent probe dyes and CMP additives on abrasive particles.

Most of polishing conditions are not consistent during the polishing process such as pressure, velocity, temperature, pad surface asperity and slurry flow which determine the CMP performance. Traditionally, these parameters are detected by various monitoring methods on CMP polisher. This study introduces a new concept of intelligent pad system with multiple sensors and peripheral devices such as memory, CPU, battery, transmitter and so on. The main functions of the intelligent pad are sensing the change of major parameters and data processing in real-time during the polishing process. The developed intelligent pad has nine points of embedded pressure sensor and makes data processing, saving, and transmitting in real-time. Experimentally, the intelligent pad system was evaluated to understand carrier behavior and pressure distribution. Finally, the analysis of pressure distribution using the intelligent pad turned out a useful method to understand the polishing head behavior and the polishing profile.

The motivation of this study is to provide answers to questions rising with 3D stacking of semiconductor chips. This includes the development and validation of concepts for 1) Through Silicon Via (TSV) formation, 2) metal layer build-up, 3) various types of assembly and packaging concepts and methods, as well as 4) process characterization.

The investigations discussed here have been conducted on test wafer (ATEC2) developed by Fraunhofer IZM-ASSID. This design contains dedicated test structures which have been implemented to enable different unit processes and allows easy physical analysis. One of those test structures has been used to study the impact of the TSV density on the stress generation after TSV fill, anneal and CMP (chemical mechanical planarization) including copper protrusion and planarization behaviour. First results of the interaction between different TSV plating bath chemicals, anneal procedures and wafer bow obtained using test wafer ATEC1 were already presented during ICPT 2011.

The process flow applied in this investigation was (1) TSV filling by electro-plating, (2) anneal, and (3) CMP. Physical analysis including inline metrology has been conducted between all process steps.

The test wafers processed were divided into two groups according to the utilized copper plating bath chemistries. The copper TSV metallization was carried out by electro-chemical deposition in plating bath chemicals from two different suppliers. 3D microscope inspection was conducted for surface analysis. After TSV filling the copper surface shows protrusion on top of the TSVs and ring-shaped non-uniformities around the filled TSV. These structures were analysed after each step of the process flow.

An anneal process was conducted after TSV plating. The annealing temperature was varied to investigate its influence on the material properties (protrusion caused by copper recrystallization) and the dip behaviour. The experiments were accomplished at 250 degree Celsius and above.

Afterwards all test samples were processed by CMP with different selective slurries and analysed by AFM (atomic force microscopy) and optical methods. Bow and warpage measurements of the test wafers taken after each process step have been analysed.

Our investigation has demonstrated the influence of the additives on the behaviour of different plating bath chemistries during temperature treatment (copper recrystallization) and therefore also the planarization behaviour after CMP.

Most chemical mechanical polishing (CMP) researchers assume that the polishing occurs in the mixed-lubrication regime, where the applied load on the wafer is supported by the hydrodynamic slurry pressure and the contact stress generated during the pad-wafer contact. Consequently, the particle augmented mixed lubrication (PAML) approach has been employed as an extremely high-fidelity asperity-scale mixed-lubrication CMP model in the past. Recently, a more computationally efficient PAML approach, PAML-lite, which considers the slurry’s fluid and particle dynamics, the pad/wafer contact mechanics, and the resulting material removal, was introduced. The current work presents the PAML-lite framework with the isothermal assumption relaxed. As a result, wafer-scale interfacial temperatures during CMP can be predicted by considering asperity heating and dissipation of the heat into the solid and fluid media in the sliding contact.

A new multiphysics, multiscale framework is presented which is capable of capturing and predicting both wafer-scale and feature-scale defects. Through physics-based modeling, the empirical wear/Preston coefficient often found in popular feature scale models has been eliminated. Simulation results show the topography evolution of an actual metal 1 layout between two dies located in different positions on a wafer during the CMP process.

Aluminum (Al) gate fill has been implemented in Replacement Metal Gate (RMG) due to its low resistivity. Titanium (Ti) has been widely used as wetting layer for Al to fill the gates. For low resistance gate fill in structures with small feature size and high aspect ratio, Ti-Al metal fill becomes increasingly more challenging as we move from 20nm into 14nm FinFET and 3D type structures.

Cobalt (Co) is a good wetting film for Al with better fill performance and lower resistance than Ti-Al based process. However, due to the difference in corrosion potential between Al and Co, Chemical Mechanical Planarization (CMP) creates pitting type defects on Al-Co film that increases resistance variability across pattern density. CMP induced corrosion is separated in two parts; first is the static Co corrosion happened in the acidic chemical environment in the Al slurry. Second is the galvanic corrosion from Co-Al metal boundary due to high metal electrical potential. Static corrosion can be resolved by adding a Co corrosion inhibitor in the slurry formulation1. Galvanic corrosion can be minimized by controlling Co thickness deposition and formation of complete intermetallic phase. By controlling the removal rate with respect to corrosion rate we were able to suppress corrosion significantly.

We looked into compositions where the corrosion potential (Ecorr) gap between Al and Co is reduced to ≤10mV leading to reduced galvanic currents. Stabilization of the corrosion currents in both Al and Co was observed using potentiodynamic scans. The effect of pH, several oxidizers and additives on the open circuit potentials (Eoc) of Al and Co was investigated and it was found that solutions of KMnO4, saccharides and sulfonate group containing compounds help reduce the Ecorr gap in between Al and Co to ∼10 mV.

Controlling the Al gate height across pattern densities and gate lengths to within few nm is another challenge for Al CMP. The industry widely used approach is to clear all Al using a slurry with high selectivity to dielectric, followed by a CMP step using a non-selective Al-to-oxide slurry. Both polishing steps need to be optimized in parallel in order to remove the incoming spacer SiN divot, minimize Al loss on gates with high pattern density or long gate length, minimize oxide loss on large open areas while maintaining low defectivity.

In this paper we are presenting an innovate Al CMP process that demonstrated low gate resistance with tight distribution up to 80% pattern density. This work has been supported by the independent Bulk CMOS and SOI technology development projects at the IBM Microelectronics Division Semiconductor Research & Development Center, Hopewell Junction, NY 12533.

In this study, slurry formulations in the presence of self-assembled surfactant structures were investigated for Ge/SiO2 CMP applications in the absence and presence of oxidizers. Both anionic (sodium dodecyl sulfate-SDS) and cationic (cetyl trimethyl ammonium bromide-C12TAB) micelles were used in the slurry formulations as a function of pH and oxidizer concentration. CMP performances of Ge and SiO2 wafers were evaluated in terms of material removal rates, selectivity and surface quality. The material removal rate responses were also assessed through AFM wear rate tests to obtain a faster response for preliminary analyses. The surfactant adsorption characteristics were studied through surface wettability responses of the Ge and SiO2 wafers through contact angle measurements. It was observed that the self-assembled surfactant structures can help obtain selectivity on the silica/germanium system at low concentrations of the oxidizer in the slurry.