15 results
Stressed solid-phase epitaxial growth of (011) Si
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- Journal:
- Journal of Materials Research / Volume 24 / Issue 2 / February 2009
- Published online by Cambridge University Press:
- 03 March 2011, pp. 305-309
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- February 2009
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Enhanced Boron Diffusion in Amorphous Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C10.3
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- 2004
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Modeling of Dopant Defect Interactions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J9.1
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- 2001
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Relative Stability of Silicon Self-Interstitial Defects
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B11.10
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- 2000
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Effects of Arsenic Deactivation on Arsenic-Implant Induced Enhanced Diffusion in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 396 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 167
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- 1995
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The Effects of Rapid Recrystallization and Ion Implanted Carbon on The Solid Phase Epitaxial Regrowth of Si1−xGex Alloy Layers On Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 379 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 453
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- 1995
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Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 358 / 1994
- Published online by Cambridge University Press:
- 28 February 2011, 987
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- 1994
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Sputtering Induced Changes in Defect Morphology and Dopant Diffusion for Si Implanted GaAs: Influence of Ion Energy and Implant Temperature
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- Journal:
- MRS Online Proceedings Library Archive / Volume 354 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 337
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- 1994
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Defects and Diffusion in Si+ Implanted GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 300 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 323
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- 1993
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Time Dependent Diffusion of P-Type Dopants in Gallium Arsenide
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- Journal:
- MRS Online Proceedings Library Archive / Volume 300 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 397
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- 1993
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Tem Analysis of Interfacial Reactions Between TiWn, Wn Gate Metallizations and GaAs in Mesfet Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 319 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 81
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- 1993
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The Effect of Mass Resolution During Ion Implantation on Defect Formation and Electrical Properties in Gallium Arsenide.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 316 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 337
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- 1993
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Amorphization of elemental and compound semiconductors upon ion implantation
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- Journal:
- Journal of Materials Research / Volume 6 / Issue 5 / May 1991
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1048-1054
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- May 1991
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Raman Studies of Znse Lattice Damage and Recovery Due to N Implantation and Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 209 / 1990
- Published online by Cambridge University Press:
- 26 February 2011, 457
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- 1990
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Low-Energy Implantation of Si and Sn into GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 157 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 677
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- 1989
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