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CAEP/9-agreed certification requirement for the Aeroplane CO2 Emissions Standard: a comment on ICAO Cir 337
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- Journal:
- The Aeronautical Journal / Volume 120 / Issue 1226 / April 2016
- Published online by Cambridge University Press:
- 20 April 2016, pp. 693-723
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Contributors
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- Mental Health and Disasters
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- 07 May 2010
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- 20 July 2009, pp xi-xvi
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Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si1–X Gex Gas-Source Epitaxy
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- MRS Bulletin / Volume 26 / Issue 10 / October 2001
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- 19 April 2013, pp. 777-789
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- October 2001
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Multiscale Modeling of Thin-Film Deposition: Applications to Si Device Processing
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- MRS Bulletin / Volume 26 / Issue 3 / March 2001
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- 31 January 2011, pp. 182-189
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- March 2001
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Xps, Ups, and Hreels Studies of Excimer-Laser-Induced Dissociation of Al2(Ch3) Adsorbed on Si(100) Surfaces
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- MRS Online Proceedings Library Archive / Volume 101 / 1987
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- 26 February 2011, 151
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- 1987
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Indium Ion Doping During Si Molecular Beam Epitaxy
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- MRS Online Proceedings Library Archive / Volume 93 / 1987
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- 25 February 2011, 3
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- 1987
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Primary and Secondary Ion Deposition of Epitaxial Semiconductor Films From Laser-Induced Plasmas
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- MRS Online Proceedings Library Archive / Volume 29 / 1983
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- 21 February 2011, 359
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- 1983
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Semiconductor Thin Films Grown by Laser Photolysis
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- MRS Online Proceedings Library Archive / Volume 17 / 1982
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- 15 February 2011, 185
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- 1982
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Epitaxial Ge/GaAs Heterostructures by Scanned CW Laser Annealing of a-GE Layers on GaAS
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- MRS Online Proceedings Library Archive / Volume 4 / 1981
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- 15 February 2011, 701
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- 1981
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Ion Mixing During Film Deposition: Growth of Metastable Semiconducting and Metallic Alloys
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- Journal:
- MRS Online Proceedings Library Archive / Volume 7 / 1981
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- 15 February 2011, 93
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- 1981
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