52 results
Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD
-
- Journal:
- MRS Advances / Volume 2 / Issue 3 / 2017
- Published online by Cambridge University Press:
- 16 January 2017, pp. 135-140
- Print publication:
- 2017
-
- Article
- Export citation
Transition Metal Doped ZnO for Spintronics
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 999 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0999-K03-04
- Print publication:
- 2007
-
- Article
- Export citation
Properties of Ferromagnetic GaGdN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I01-04
- Print publication:
- 2006
-
- Article
- Export citation
Magnetic and Optical Properties of Eu-doped GaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I15-01
- Print publication:
- 2006
-
- Article
- Export citation
Photoluminescence from Gd-implanted AlN and GaN Epilayers
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I10-02
- Print publication:
- 2006
-
- Article
- Export citation
Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I10-05
- Print publication:
- 2006
-
- Article
- Export citation
Excitation-Wavelength Dependent and Time-Resolved Photoluminescence Studies of Europium Doped GaN Grown by Interrupted Growth Epitaxy (IGE)
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 866 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, V3.5
- Print publication:
- 2005
-
- Article
- Export citation
Visible and Infrared Emission from Er-doped III-N Light Emitting Diodes
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 866 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, V3.3
- Print publication:
- 2005
-
- Article
- Export citation
Evidence of Carrier Mediated Ferromagnetism in GaN:Mn/GaN:Mg Heterostructures
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E9.2
- Print publication:
- 2004
-
- Article
- Export citation
The Effect of Mn Concentration on Curie Temperature and Magnetic Behavior of MOCVD Grown GaMnN Films
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 834 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, J7.3
- Print publication:
- 2004
-
- Article
- Export citation
The Dependence of the Magnetic Properties of GaMnN on Codoping by Mg and Si
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 834 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, J7.2
- Print publication:
- 2004
-
- Article
- Export citation
Magnetic properties of Mn-doped GaN, InGaN, and AlGaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y8.6
- Print publication:
- 2003
-
- Article
- Export citation
Wide Bandgap Materials for Semiconductor Spintronics
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 799 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Z9.6
- Print publication:
- 2003
-
- Article
- Export citation
Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 810-816
- Print publication:
- 2000
-
- Article
-
- You have access
- HTML
- Export citation
Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (Mombe) and Solid Source Molecular Beam Epitaxy (SSMBE)
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 824-830
- Print publication:
- 2000
-
- Article
-
- You have access
- HTML
- Export citation
Photonic Applications of Rare-Earth-Doped Materials
-
- Journal:
- MRS Bulletin / Volume 24 / Issue 9 / September 1999
- Published online by Cambridge University Press:
- 29 November 2013, pp. 16-20
- Print publication:
- September 1999
-
- Article
- Export citation
Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.62
- Print publication:
- 1999
-
- Article
- Export citation
Luminescence from Erbium-Doped Gallium Nitride Thin Films
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 926-932
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation
Optical and Structural Properties of Er3+-Doped GaN Grown by MBE
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 435-440
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation
Novel in-situ Ion Bombardment Process for A Thermally Stable (> 800 °C) Plasma Deposited Dielectric
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 183
- Print publication:
- 1999
-
- Article
- Export citation