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Visible and Infrared Emission from Er-doped III-N Light Emitting Diodes

Published online by Cambridge University Press:  01 February 2011

John M. Zavada ,
Ei Ei Nyein ,
Uwe Hömmerich ,
J. Li ,
J. Y. Lin ,
H. X. Jiang ,
P. Chow  and
Jian-Wei Dong
John M. Zavada
Affiliation:
U.S. Army Research Office, Durham, NC 27709
Ei Ei Nyein
Affiliation:
Department of Physics, Hampton University, Hampton, VA 23668
Uwe Hömmerich
Affiliation:
Department of Physics, Hampton University, Hampton, VA 23668
J. Li
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506
J. Y. Lin
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506
H. X. Jiang
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506
P. Chow
Affiliation:
SVT Associates, Inc., Eden Prairie, MN 55344
Jian-Wei Dong
Affiliation:
SVT Associates, Inc., Eden Prairie, MN 55344
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Abstract

We report on the visible and infrared emission characteristics of Er-doped III-N lightemitting diodes (LEDs). Quantum well-like device structures were grown through a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) on cplane sapphire substrates. The dual stage growth process was used to take advantage of the high quality of AlGaN layers produced by MOCVD and in situ doping of Er during MBE growth. The multilayer structures were processed into devices and LEDs with different sizes and geometric shapes were produced. Electroluminescence (EL) was observed under either forward or reverse bias conditions. Visible and infrared spectra displayed narrow emission lines representative of the Er3+ system. The temperature dependence of the spectra, which were measured from 100K to 300K, showed a stability in the visible emission intensity but a sharp decrease in the infrared intensity at room temperature. Based on light output vs current measurements, estimates of the excitation cross-section were obtained for visible EL emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V3.3
Copyright
Copyright © Materials Research Society 2005

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Footnotes

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E-mail: [email protected]

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