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Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er

Published online by Cambridge University Press:  03 September 2012

M.E Overberg ,
C.R. Abernathy ,
S. J. Pearton ,
R. G. Wilson  and
J. M. Zavada
M.E Overberg
Affiliation:
Department of Materials Science and Engineering, University of Florida Gainesville, FL 32611, U. S. A
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida Gainesville, FL 32611, U. S. A
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida Gainesville, FL 32611, U. S. A
R. G. Wilson
Affiliation:
Consultant Stevenson Ranch, CA 91381, U. S. A
J. M. Zavada
Affiliation:
U. S. Army European Research Office London, NW1 5 TH, U. K
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Abstract

The surface morphology and the room temperature 1.54 µm photoluminescence (PL) intensity from GaN:Er grown by gas source molecular beam epitaxy have been investigated as a function of C concentration as introduced by CBr4. Similar to previous results with increasing Er level, increasing the C concentration initially improved the surface smoothness as measured by atomic force microscopy (AFM) and scanning electron microscopy (SEM), with RMS roughness improving by a factor of seven over undoped GaN. The PL also improved dramatically. However, the highest amounts of C investigated produced a decrease in the PL as well as a roughening of the film surface. These effects indicate that the GaN:Er had reached its C solubility limit, producing an increased amount of defect induced nonradiative recombination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.62
Copyright
Copyright © Materials Research Society 1999

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