Dynamic random-access memory (DRAM) is the main memory in most current computers. The excellent scalability of DRAM has significantly contributed to the development of modern computers. However, DRAM technology now faces critical challenges associated with further scaling toward the ∼10-nm technology node. This scaling will likely end soon because of the inherent limitations of charge-based memory. Much effort has been dedicated to delaying this. Novel cell architectures have been designed to reduce the cell area, and new materials and process technologies have been extensively investigated, especially for dielectrics and electrodes related to charge storage. In this article, the current issues, recent progress in and the future of DRAM materials, and fabrication technologies are discussed.

For many years, comprehensive data demonstrate a persistent lack of interest in the field of science, technology, engineering and mathematics (STEM) among students in European and North American countries. This lack of interest is regarded as one reason causing underrepresentation of diversity, especially that of female students within the field of STEM. Obviously, students—although possibly highly talented—refrain from choosing STEM careers only because their attention is not sufficiently attracted to STEM at the right time at the right place. In particular, this fact significantly affects the field of material research and, therefore, identifying opportunities for sparking students’ interest in materials is a crucial challenge in the framework of a modern STEM education. Here, we present the outline of the novel project “Metal Matters”, which aims at establishing an interdisciplinary approach to foster the field of materials in education. In essence, our research focusses on the omnipresence of metal as material. By exploring the K-16 continuum, we aim to identify windows of opportunities for raising awareness of the relevance of materials. Our approach is to stimulate interest in the relevance of materials by explicitly promoting metal as a topic across the curriculum. Our project is deliberately not restricted to STEM, but also covers history, society, economy, health, sports, literature, and language. Here, we present one part of the project contrasting the scientific relevance of metal with the students’ ideas about metal. For the present exploration and data collection, we employed a mixed-method design consisting of linguistic frequency analysis of scientific publications as well as the qualitative analysis of students’ written responses and drawings.

The effect of longitudinal alternating current (LAC) on the growth of the interfacial layers of the copper cladding aluminum (CCA) composite flat bar during isothermal annealing was investigated. The results showed that the application of LAC could remarkably inhibit the growth of interfacial compounds as well as improve the interfacial bonding property of the CCA composite. When the CCA flat bars were annealed at temperatures ranging from 723 to 773 K for 1 h with a LAC density higher than 0.625 A/mm2, the total thickness of the interfacial compound layers was reduced by more than 75% in comparison to CCA flat bars annealed without LAC. The reduction of the thickness of the interfacial layers resulted in an improvement of the bonding strength of the CCA composite. The mechanism of the inhibition effect was that the application of LAC could accelerate the vacancy annihilation in component metals.

The effects of minor Cu (0–0.29 wt%) and Mg (0–0.1 wt%) additions on the microstructure, electrical conductivity, mechanical, and creep properties of 8xxx aluminum conductor alloys were studied. The microstructure evolution was investigated using an optical microscope and the electron backscattered diffraction technique. The creep property was characterized by the primary creep strain and the minimum creep rate during creep deformation. The results demonstrated that additions of minor Cu and Mg reasonably improved the ultimate tensile strength but slightly reduced electrical conductivity. The addition of Cu remarkably decreased the primary creep strain but had a negligible effect on the minimum creep rate, leading to a beneficial effect on the short-term creep resistance but no advantage to the creep resistance under the long-term creep process. The minor addition of Mg greatly reduces both the primary creep strain and minimum creep rate, resulting in a significant and effective improvement in the creep resistance.

We report the use of a novel extrusion tip that allows for the omnidirectional printing of eutectic gallium-indium (eGaIn) alloy onto the surface of hydrogel materials into complex 2-dimensional patterns. The use of these printed soft “wires” as an electrothermal heating element for soft robotics purposes was explored. Heating of the eGaIn structures encapsulated in an alginate/acrylamide ionic-covalent entanglement hydrogel was measured by a thermal imaging camera. It was determined that eGaIn is a suitable material for use in future soft robotics applications as an electrothermal heating element to actuate thermally responsive N-isoproylacrylamide hydrogels.

Discovery of superconductivity in BiS2 layers based systems has attracted tremendous interest of both experimentalists and theoreticians from condensed matter physics community. In this article, a review of our high pressure studies on BiS2 based superconductors is given. The pressure effects on magnetic, transport properties and superconducting transitions are discussed for different types of doped and undoped BiS2-based compounds such as Bi4O4S3 and ReO/FBiS2 (Re = rare-earth). Pressure tends to decrease the magnetic transition temperature in the undoped or only slightly doped compounds. The superconducting Tc increases with low pressure for under doped BiS2 based compounds, remains approximately constant for optimal doping, and decreases linearly in the overdoped range. Under pressure, the semiconducting behavior in the normal state is suppressed markedly and monotonically, whereas the evolution of Tc is nonlinear, the superconductivity in the BiS2 layer favors the Fermi surface at the boundary between the semiconducting and metallic behaviors. However, strong suppression of the semiconducting and induced metallic behavior without doping in ReO/FBiS2 suggests that the Fermi surface is located in the vicinity of some instability. Furthermore, notable properties under pressure in the BiS2 family are reported. The prospects for raising Tc in this family are proposed on the basis of experimental and theoretical studies.

The [(BiSe)1+δ]1(VSe2)1 heterostructure was characterized structurally and electrically to determine the effects of interlayer interaction on the charge density wave (CDW) found in VSe2 and compared to previously reported [(SnSe)1.15]1(VSe2)1. Out-of-plane x-ray diffraction scans contain reflections that can be indexed as 00l reflections of a BiSe–VSe2 supercell. Structure refinement indicates that the VSe2 layer is very similar structurally to that found in [(SnSe)1.15]1(VSe2)1. Scanning transmission electron microscopy images show a turbostratically disordered layer structure and the formation of anti-phase boundaries in the BiSe bilayer. The [(BiSe)1+δ]1(VSe2)1 heterostructure is metallic with a negative Hall coefficient, in contrast to the positive Hall coefficient found for [(SnSe)1.15]1(VSe2)1. The CDW found [(SnSe)1.15]1(VSe2)1 is not present in [(BiSe)1+δ]1(VSe2)1. This work illustrates the importance of inter constituent interactions in determining the transport properties of single layer films.

As electronic devices are indispensable in many aspects of our lives today, their integration with unconventional surfaces is increasingly essential. Electronic devices which maintain their electrical properties upon stretching are desirable for various wearable applications. Stretchable devices demonstrated are conventionally fabricated using semiconductor processing techniques. In this study, we demonstrate stretchable electrodes, which are basic components of electrical circuits, using screen printing, a large area printing method. It provides a low cost and scalable method to fabricate large area stretchable devices. Despite the larger width and thickness of the electrodes which increases the stiffness of the material, stretchability beyond 40% is demonstrated, which is suitable for certain wearable applications. The stretchable electrodes are integrated with light emitting diodes (LEDs) to demonstrate a stretchable LED matrix. The large area LED matrices exhibit variable stretchability, depending on the LED areal coverage. This technique is expected to be applicable in the fabrication of other stretchable, large area, and more complex electronic systems.

Process-induced defects in electroplated Au interconnect metallization on GaAs devices were detected during the course of reliability testing. Abnormally high lognormal sigma values (σ > 0.7) indicated the existence of a bi-modal failure mechanism. A distinct early lifetime failure mode was observed along with the intrinsic electromigration metallization wear-out failure mode. Physical characterization of the electroplated Au film revealed as-deposited nanoscale voids. Elimination of these voids through process improvement as well as suggested mechanisms for the early failures are discussed.

A comparison between reported analytical results with experimental data of the magnetic flux density on cylindrical tin inclusions of elliptical cross-section embedded in a copper matrix under external thermal excitation is presented. By changing the aspect ratios b/a designated by e of the elliptical inclusions, a wide range of real situation such as slender inclusions can be simulated. The experimental magnetic field distribution illustrated the potential for the non contacting thermoelectric technique to detect and characterize metallic inclusions of different geometries based on their magnetic signature. Preliminary results on a cylindrical hard alpha (TiN) inclusion embedded in Ti–6Al–4V matrix is also presented to demonstrate that the proposed non-destructive method might be applicable to a wide range of alloys including high-strength, high-temperature engine materials.

The electromigration lifetimes of a very large quantity of passivated electroplated Au interconnects were measured utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C prevented large Joule-heated temperature gradients and electrical overstress failures. A Joule-heated Au film temperature increase of 10°C on average was determined from measured temperature coefficients of resistance (TCRs). A failure criterion of 50% resistance degradation was selected to avoid thermal runaway and catastrophic open circuit failures. All Au lifetime distributions followed log-normal statistics. An activation energy of 0.80 ± 0.05 eV was measured from constant-current electromigration tests at multiple temperatures. A current density exponent of 1.91 ± 0.03 was extracted from multiple current densities at a single constant temperature.

Here we introduce a highly stretchable Printed Circuit Board (PCB) inter-connection technology achieved through the combination of flexibility allowed by the silver nanowire (AgNW)-based electrode and stretchability provided by the meander-shaped substrate. Horseshoe-shaped elastic material, polydimethylsiloxane, is used as a substrate of the AgNW conductors for relaxed stress concentration. Continuously maintained 2-D percolation of stretchable AgNW networks overcomes the usage restrictions with ordinary rigid Printed Circuit Board (PCB). The horseshoe-shaped inter-connection is physically reliable with repeated stretching/releasing processes and maintains its conductivity under tensile strains up to 20 %, allowing the durable and stretchable PCB inter-connecting applications.

A comprehensive study of SrRuO3 thin films growth on (001) MgO substrates by pulsed laser deposition in a wide oxygen pressure range from 10 to 300 mTorr was carried out. The experimental results showed a correlation between the lattice constants, resistivity, and oxygen partial pressures used. Ru deficiency detected only in films deposited at lower oxygen pressures (<50 mTorr), resulted in an elongation of the in-plane and out-of-plane lattice constants and an increase in the film resistivity. When deposited with oxygen partial pressure of 50 mTorr, SrRuO3 films had lattice parameters matching those of bulk SrRuO3 material and exhibited room temperature resistivity of 320 μΩ·cm. The resistivity of SrRuO3/MgO films decreased with increasing oxygen partial pressure.

The electric resistance and the transport properties of a carbon nanotube (5,5) adsorbed with a copper chain connected with two copper end electrodes have been calculated by employing the nonequilibrium Green’s function and the Density Function Theory. The properties of the pure carbon nanotube (5,5) with the Cu electrodes have also been calculated as a reference. Both the equilibrium and the nonequilibrium conditions have been investigated. The results have shown that the electrical resistance of the metallic CNT (5,5) has been reduced by the adsorption of the Cu chain due to the interaction between the Cu and the CNT. The change of the I-V curve slope is also explained in terms of the transmission spectrum.

As produced, raw carbon nanotubes are not soluble in many solvents necessary for printing applications. Standard methods for circumventing this problem involve sidewall functionalization and surfactants. Sidewall functionalization invariably destroys the π-network that gives carbon nanotubes their useful electronic properties, while surfactants deposit an insulating layer onto the carbon nanotube surface that must be washed off to regain the desired properties. Non-covalent functionalization offers the possibility to achieve solubility without destroying the π-network, but published methods have resulted in relatively low concentrations or substandard electronic performance. We have developed a scalable method to non-covalently functionalize long (> 3 μm) carbon nanotubes with simple pyrene derivatives. This method produces highly dispersed solutions with concentrations as high as 2.5 g/l that can be used to produce conductive coatings with sheet resistance as low as 350 Ω/sq with 85% transmittance at 550 nm without post-deposition washing or doping treatments. The functionalized carbon nanotubes can be formulated into solutions that can be printed by ink-jet deposition, Aerosol-Jet® deposition, screen printing, and spray coating for printed electronics fabrication, and the solutions are stable for months without signs of bundling.

For the construction of highly conductive printed electrodes on a polymeric substrate with a low glass transition temperature, the development of a low temperature sinterable conductive ink has been a crucial issue in printed electronics and display applications. In this work, we introduce a novel type of self-sinterable silver ink, whose sintering is triggered at a low temperature and completed with the aid of its own exothermic reaction, and propose its exothermic reaction mechanism. Although individual components of this self-sinterable silver ink, Ag2O and silver carboxylate, exhibit endothermic behaviors, their mixture form shows a strong exothermic reaction when heated at 150 °C. It is found that the dissociated form of the used silver carboxylate contributes to the reduction of Ag2O to Ag through its recursive reaction and produces silver nanoparticles. The major source of an exothermic reaction results from the nucleation and fusion of silver nanoparticles.

Wireless communications such as those in cell phones are utilizing increasing chip design complexity. For example analog mixed-signal chips can contain RF capability which requires integrated inductors [1,2]. High performance RF designs are enabled by the use of thick Copper (Cu) and Aluminum (Al) wires (>3um). In particular, the quality factor of the inductor, which is the ratio of magnetic stored energy over average dissipation, is dependent on the metal thickness. High quality factors, can be achieved by using thick Cu inductors. In some applications, the total thickness of Cu in the inductor can be as much as 12 um.

The fabrication of thick Cu layers is in many ways easier than that of thin Cu layers. For example, there are no limitations in terms of lithography or liner and seed layer thickness. However, there are still challenges with fabrication due to stress. Cracking of the dielectric can occur, due to the mismatch in coefficient of thermal expansion between Cu and SiO2, and due to the thick Cu layers in the inductor stack. Both the layout and the processing must be optimized to ensure that cracking does not occur.

This paper will discuss current applications, inductor design, and the reliability challenges and solutions associated with thick Cu interconnects.

Lightweight porous metallic materials are generally created through specialized processing techniques. Their unique structure gives these materials interesting properties which allow them to be used in diverse structural and insulation applications. In particular, highly porous Al structures (Al foams) have been used in aircraft components and sound insulation; however due to the difficulty in processing and random nature of the foams, they are not well understood and thus they have not yet been utilized to their full potential. The objective of this project was to determine whether a relationship exists between the relative density (porous density/bulk density) and the mechanical properties of porous Al structures. For this purpose, a combination of computer simulations and experiments was pursued to better understand possible relationships. A Finite Element Method (FEM)-based software, COMSOL Multiphysics 4.3, was used to model the structure and to simulate the mechanical behavior of porous Al structures under compressive loads ranging from 1-100 MPa. From these simulated structures, the maximum von Mises stress, volumetric strain, and other properties were calculated. These simulation results were compared against data from compression experiments performed using the Instron Universal Testing Machine (IUTM) on porous Al specimens created via a computernumerically-controlled (CNC) mill. CES EduPack software, a materials design program, was also used to estimate the mechanical properties of porous Al and open cell foams for values not available experimentally, and for comparison purposes. This program allowed for accurate prediction of the mechanical properties for a given percent density foam, and also provided a baseline for the solid Al samples tested. The main results from experiments were that the Young’s moduli (E) for porous Al samples (55.8% relative density) were 15.9-16.6 GPa depending on pore diameter, which is in good agreement with the CES EduPack predictions; while the compressive strengths (σc) were 155-185 MPa, higher than those predicted by CES EduPack. The results from the FEM simulations using 3D models (55.8% relative density) revealed the onset of yielding at 13.5-14.0 MPa, which correlates well with CES EduPack data. Overall results indicated that a combination of experiments and FEM simulations can be used to calculate structure-property relationships and to predict yielding and failure, which may help in the pursuit of simulation-based design of metallic foams. In the future, more robust modeling and simulation techniques will be explored, as well as investigating closed cell Al foams and different porous geometries (nm to micron). This study can help to improve the current methods of characterizing porous materials and enhance knowledge about their properties for alternative energy applications, while promoting their design through integrated approaches.

Thin native oxide layers can dominate the mechanical properties of metallic thin films. However, to date there has been little quantification of how such overlayers affect yield and fracture during indentation in constrained film systems. To gain insight into such processes, electrical contact resistance was measured in situ during nanoindentation on constrained thin films of epitaxial Cr and polycrystalline Al, both possessing a native oxide overlayer. Measurements during loading of the films show both increases and decreases in current, which can then be used to distinguish between various sources of plasticity. Ex situ measurements of the oxide thickness are used to provide a starting point for elasticity simulations of stress in both systems. The results show that dislocation nucleation in the metal film can be differentiated from oxide fracture during indentation.

Long term stability has been a crucial issue for the future applications of the solid oxide fuel cells (SOFCs). Current collectors for the cathodes have been among the most vulnerable components of the SOFCs due to their operation in oxidizing atmospheres at relatively high temperatures. Ag and Ag based LSM (lanthanum-strontium manganite) composites were studied to develop highly stable and low-cost current collectors compatible with other fuel cell components. In this study, no degradation was observed in the electrical conductivity and the porous microstructure of the Ag-LSM composite current collectors after 600 hours of operation at 800oC in air.