Pulsed coherent extreme ultraviolet (EUV) radiation is a potential alternative to pulsed near-ultraviolet (NUV) wavelengths for atom probe tomography. EUV radiation has the benefit of high absorption within the first few nm of the sample surface for elements across the entire periodic table. In addition, EUV radiation may also offer athermal field ion emission pathways through direct photoionization or core-hole Auger decay processes, which are not possible with the (much lower) photon energies used in conventional NUV laser-pulsed atom probe. We report preliminary results from what we believe to be the world’s first EUV radiation-pulsed atom probe microscope. The instrument consists of a femtosecond-pulsed, coherent EUV radiation source interfaced to a local electrode atom probe tomograph by means of a vacuum manifold beamline. EUV photon-assisted field ion emission (of substrate atoms) has been demonstrated on various insulating, semiconducting, and metallic specimens. Select examples are shown.

Conventional electron microscopy during the last three decades has experienced tremendous developments, especially in equipment design and engineering, to become one of the most widely recognized and powerful tools for key research areas in materials science and nanotechnology. In this article, we discuss scanning ultrafast electron microscopy (S-UEM) as a new methodology for four-dimensional electron imaging of material surfaces. We also illustrate a few unique applications. By monitoring secondary electrons emitted from surfaces of photoactive materials, photo- and electron-impact-induced electrons and holes near surfaces, interfaces, and heterojunctions can be imaged with adequate spatial and temporal resolution. Charge separation, transport, and anisotropic motions as well as their dependence on carrier energies can be resolved. S-UEM is poised to directly image and visualize relevant interfacial dynamics in real space and time for emerging optoelectronic devices and help push their performance.

We report a novel tip-type field emission (FE) emitter by synthesizing the few-layer graphene (FLG) flakes on tip of nichrome (8020) wire (ϕ≈80 μm) by microwave plasma enhanced chemical vapor deposition(PECVD). These resultant random arrays of free-standing FLG flakes are aligned vertically to the substrate surface in a high-density and stacked to each other to form several larger “flower-like” agglomerates in spherical shapes. The FE performance of the tip-type FLG flakes emitter shows a low threshold field of 0.55 V/μm, a large field enhancement factor of 9455 ± 46, a large field emission current density of 22.18 A/cm2 at 2.70 V/μm, and an excellent field emission stability at high emission current densities (6.93 A/cm2). It can be used in variety of applications that include cathode-ray tube monitors, X-ray sources, electron microscopes, and other vacuum electronic applications.

Electron emission represents the key mechanism enabling the development of devices that have revolutionized modern science and technology. Today, science still relies on advanced electron-emission devices for imaging, electronics, sensing, and high-energy physics. New generations of emission devices are continuously being improved based on innovative materials and the introduction of novel physical concepts. Recent advances are highlighted by emerging low-work-function and low-dimensional materials with unusual electronic and thermal properties. Nanotubes, nanowires, graphene, and electron-emission models are discussed in this issue, as well as original mechanisms, such as the thermoelectronic effect, thermionic emission, and heat trap processes. Advances in electron-emission materials and physics are driving a renaissance in the field, both opening up new applications, such as energy conversion and ultrafast electronics, as well as improving traditional applications in electron imaging and high-energy science.

The theories of thermionic emission and field emission (also known as the Richardson–Dushman [RD] and Fowler–Nordheim [FN] Laws, respectively) were formulated more than 80 years ago for bulk materials. In single-layer graphene, electrons mimic massless Dirac fermions and follow relativistic carrier dynamics. Thus, their behavior deviates significantly from the nonrelativistic electrons that reside in traditional bulk materials with a parabolic energy-momentum dispersion relation. In this article, we assert that due to linear energy dispersion, the traditional thermionic emission and field emission models are no longer valid for graphene and two-dimensional Dirac-like materials. We have proposed models that show better agreement with experimental data and also show a smooth transition to the traditional RD and FN Laws.

A generalized route encompassing a facile hybrid physical/chemical approach is reported for fabricating size and shape selective nanowires of technologically important ferroelectric perovskite oxides (Pb(Zr0.52Ti0.48)O3 (PZT) and Pb-free ZnSnO3) on industrially feasible large-area substrates. The approaches involve depositing nano-seed layers (50 - 100 nm in thickness) of the desired materials (Ti for PZT and ZnO for ZnSnO3) by pulsed laser deposition and RF sputtering techniques followed by oriented growth of nanowire arrays of these materials by solvothermal processes by varying solvent compositions and ratios. Similar crystal symmetry between the seed-layers facilitated the growth of well-aligned nanowire arrays of the targeted materials homogeneously on the substrates with a high packing density. Measurements of the electronic (field-emission), and ferroelectric properties of the materials are performed and discussed in terms of understanding their potential for future technological applications. The facile, low-cost method for fabricating high quality nanowires may expand the outreach of probes for understanding the structure-property relations in other perovskite materials.

Nitrogen-doped multiwalled carbon nanotube (CNT) bundles exhibiting pine-tree-like morphologies were synthesized on silicon–silicon oxide (Si/SiO2) substrates using a pressure-controlled chemical vapor deposition process. Electron field emission (FE) measurements showed a notable emission improvement at low turn-on voltages for the CNT pine-like morphologies (e.g., 0.59 V/µm) in comparison with standard aligned N-doped CNTs (>1.5 V/µm). We envisage that these pine-tree-like structures could be potentially useful in the fabrication of efficient FE and photonic devices.

Diamond films with good electron emission properties show great potential for applications such as electron sources. For single-crystalline diamond, the negative electron affinity at hydrogen-terminated surfaces enables efficient emission of conduction electrons into vacuum. Although electrons are not naturally present in the diamond conduction band, p–n junction diode structures make this possible; electrons are injected from n-type diamond to the conduction band of p-type diamond, giving rise to electron emission with efficiencies exceeding 1%. Alternatively, impacting electron beams can be used to inject “secondary” electrons into the conduction band, resulting in high emission gain. For ultrananocrystalline diamond (UNCD) films with versatile granular structure, enhanced electron field emission (EFE) properties can be achieved by altering the granular structure of the films. Utilization of nanoscale tips as templates for growing UNCD film or direct reactive ion etching of the film further enhances their EFE behavior. On the other hand, the release of electrons through application of thermal energy can be utilized in a thermionic energy converter to directly transform heat into electricity. With the addition of ion current from doped diamond emitters to the thermionic electron current, power output enhancement of the converter can be realized.

Novel field emission (FE) devices are introduced employing lateral architecture. Ultrathin multiwalled carbon nanotube (MWCNT) sheet were utilized to fabricate the emitter. Effects of basic configuration of sheets, including the orientation of CNTs and sheet thickness were examined. The novel device achieved the threshold field (the electric field at which current density reach 1 mA/cm2) of 0.67 V/µm and enhancement factor larger than 20,000.

This work focuses on the patterning of SiC substrates prior to carbon nanotube (CNT) formation using the surface decomposition growth method for the purpose of improving the field emission capabilities of the resultant CNT film. The thermal decomposition of silicon carbide (SiC) substrates is an established approach to create highly dense arrays of vertically aligned CNTs. The attractiveness of this growth approach is that the CNTs form without the aid of a catalyst metal, yielding potentially defect free CNTs ideal for various applications. Due to the high temperature anneals (1400-1700oC) and moderate vacuum conditions (10−2 – 10−5 Torr) necessary for the thermal decomposition process to initiate on the SiC substrate, patterning CNT outcroppings ideal for enhancing the surface’s field emission properties is more difficult when compared to metal catalyst based chemical vapor deposition growth processes on silicon substrates. The intent of the SiC patterning is to reduce field screening effects between neighboring emission sites during field emission while maintaining a high emission site density. Specifically, the SiC substrate is etched to form μm scale pillars on the SiC surface. Experimental findings show that SiC substrates patterned with μm scale pillars can be decomposed to form CNT topped field emission sites, yielding a field emission substrate that outperforms a non-patterned SiC/CNT film. A turn-on electric field of 4.0 V/μm was measured.

We study on electrical and light emitting characteristics of ZnO nanorods array when an electric field is applied in lateral direction to the axis of ZnO nanorods. ZnO nanorods grown on an insulator substrate are isolated with each other, i.e. there is no continuous nucleation layer of ZnO at the base of nanorods. When the applied lateral electric field is weak, no electric current and no light emission are observed. When the electric field becomes strong, however, an electric current begins to flow and bluish white light is emitted in the form of many streaks. These light streaks start from cathode and travel in all directions.

A new type of cathode for electron field emission (FE) was fabricated. The cathode was made from ultra-thin multiwalled carbon nanotube (CNT) sheets. These sheets were drawn directly from a CNT forest, stacked layer-by-layer together and densified by isopropyl alcohol. CNT emitters were formed by utilizing laser beam to cut the sheet. The FE performance of the proposed devices has been enhanced dramatically. The threshold field for electron emission (at which the emission current is 10 mA/cm2) was 0.88 V/μm. The current density of 36 A/cm2 was achieved at the electric field of 2 V/μm. The enhanced performance is the result of the thin, uniformly distributed and aligned array of the CNT emitters.

Field electron emission model of hydrogen-terminated n-type diamond was discussed. Ultra-violet photoelectron spectroscopy characterizations indicated that the electron affinity was -0.7 eV and an internal barrier of about 3.5 eV existed on the surface. Field electron emission properties depended on anode-diamond distances. Schottky barrier lowering model suggested that this internal barrier was lowered by the electric field (5.4x106 V/cm) applied onto the negative electron affinity surface of the H-terminated n-type diamond.

Field emission from as-grown carbon nanotube (CNTs) films often suffered from high threshold electric field, and low emission site density due to screening effects. These problems can be resolved by patterned growth of CNTs on lithographically prepared catalyst films. However, these approaches are expensive and not applicable for future emitting devices with large display areas. Here we show that as-grown CNTs films can have low emission threshold field and high emission density without using any lithography processes. We have reduced screening effects and work function of as-grown CNTs films and created the novel CNT matrices by addition of vapor- and/or liquid- phase deposition. Furthermore, these CNT matrices can continuous emit electrons for 40 hours without significant degradation. The fabrication of our CNT matrices is described as follows. First, CNT films were grown by plasma-enhanced chemical vapor deposition. These vertically-aligned multiwalled carbon nanotubes (VA-MWCNTs) are having typical length and diameter of 4 microns and 40 nm, respectively. Spacing between these CNTs is ~80 nm in average, leading to poor emission properties due to the screening effect. These as-grown samples were then subjected to the deposition of strontium titanate (SrTiO3) by pulsed-laser deposition to reduce both the work function and screening effect of CNTs. The emission properties of these coated samples can be further improved by fully filled the spaces between VA-MWCNTs by poly-methyl metha acrylate (PMMA). The field emission threshold electric field was decreased from 4.22 V/μm for as-grown VA-MWCNTs to 1.7 V/μm for SrTiO3 coated VA-MWCNTs. The addition filling with PMMA and mechanical polishing can further reduce the threshold to 0.78V/μm for the so called PMMA-STO-CNT matrices. Long term emission stability and emission site density were also enhanced.

We describe two techniques to create sharp tips. The first involves the buckling of thin metal films deposited on soft, stretchable substrates. The second involves the formation of narrow necked capillary bridges.

In this paper, we report the characterization of vertically aligned ZnO nanowire (NW) arrays synthesized by metal-catalyzed chemical vapor deposition. The growth mechanism of ZnO NWs may be related to vapor-solid-nucleation. Morphological, structural, optical and field emission characteristics can be modified by varying the growth time. For growth time reaches 120 min, the length and the diameter of ZnO NWs are 1.5 μm and 350 nm, and they also show preferential growth orientation along the c-axis. Moreover, strong alignment and uniform distribution of ZnO NWs can effectively enhance the antireflection to reach the average reflectance of 5.7% in the visible region as well. Field emission measurement indicated that the growth time play an important role in density- and morphology-controlled ZnO NWs, and thus ZnO NWs are expected to be used in versatile optoelectronic devices.

We report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for initial sp2-bonded BN and subsequent cubic BN (cBN) phases by using low-energy (~20 eV) ion bombardment. Ultraviolet photoelectron spectroscopy indicates that the electron affinity is as low as 0.3 eV for both sp2-bonded BN and cBN phases. The evolution of cBN islands reduces the turn-on field down to around 9 V/μm and increases the current density up to 10-4 A/cm2. The surface potential barrier height is estimated to be about 3.4 eV for emission from the Fermi level.

Large scale fabrication of graphene over transparent flexible polymer, Polyethelyne tetrapthalate (PET), and its application in flexible field emission display is reported here. We used Cu foil (~160 mm x 60 mm) to grow graphene by thermal chemical vapor deposition process and transfer the graphene over a polymer using a straightforward hot press lamination technique. The fabrication method is facile as there is no rigorous chemical process involved and the process is also applicable towards the fabrication of large scale graphene over a wide range of transparent flexible substrates for foldable micro-electronics applications. Further, we demonstrate the application of graphene/PET polymer film as anode of transparent flexible field emission display device. The device shows low turn-on voltage ~ 1.75V/μm and high current density of ~ 65μA/cm2 with field enhancement factor (β) ~1000.

Carbon nanotubes are attractive candidates for electron field-emitters due to their high aspect ratio, mechanical stability, and electrical conductivity. It has previously been shown that an electron beam hitting the tip of a carbon nanotube biased near the threshold of field-emission can stimulate the emission of a large number of electrons from the nanotube tip. Here we report on similar experiments on arrays of free-standing multi-walled carbon nanotubes (nanotube forests) interacting with a scanning electron microscope's primary beam. Electron gains of up to 19,000 were obtained. This can enable applications such as electron detection and multiplication, and vacuum transistors.