26 results
Uniformity Control of 3-Inch GaN/InGaN Layers Grown in Planetary Reactors®
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- Journal:
- MRS Online Proceedings Library Archive / Volume 618 / 2000
- Published online by Cambridge University Press:
- 10 February 2011, 297
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- 2000
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Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 703-708
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- 1999
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Reproducibility and Uniformity of MOVPE Planetary Reactors® for the Growth of GaN Based Materials
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 321
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- 1999
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GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary® Reactors
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e38
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- 1998
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Growth and Characterization of GaN and ALxGA1−xN Thin Films Achieved Via Lateral- and/or Pendeo-Epitaxial Overgrowth on 6H-SIC(0001) Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 535 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 91
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- 1998
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Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer Movpe Reactor
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.42
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- 1998
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Lattice Location and Luminescence Behavior of Rare Earth Elements Implanted in GaN
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 1021
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- 1997
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Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN
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- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 293
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- 1997
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Ni/Si-Based Ohmic Contacts to p- and n-Type GaN
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
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- 10 February 2011, 1077
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- 1997
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Raman Analysis Of AlxGa1-xN Films
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 543
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- 1997
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Recovery of Structural Defects in GaN After Heavy Ion Implantation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 407
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- 1997
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Organometallic Vapor Phase Lateral Epitaxy of Low Defect Density GaN Layers
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 301
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- 1997
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Selection, Growth, and Characterization of Gate Insulators on Mocvd Gallium Nitride for the Use in High Power Field Effect Devices
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 1107
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- 1997
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Ohmic Contact to n-GaN with TiN Diffusion Barrier
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 1055
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- 1996
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Intrinsic and Thermal Stress in Gallium Nitride Epitaxial Films
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
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- 10 February 2011, 775
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- 1996
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Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e8
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- 1996
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Raman Analysis of Electron-Phonon Interactions in GaN Films
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
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- 10 February 2011, 725
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- 1996
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Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 107
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- 1996
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Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 781
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- 1996
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In-Plane Optical Anisotropies of AlxGa1-xN films in their Regions of Transparency
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 835
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- 1996
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