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Recovery of Structural Defects in GaN After Heavy Ion Implantation

Published online by Cambridge University Press:  10 February 2011

C. Running ,
M. Dalmer ,
M. Deicher ,
M. Restle ,
M. D. Bremser ,
R. F. Davis  and
H. Hofsäss
C. Running
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
M. Dalmer
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
M. Deicher
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
M. Restle
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
M. D. Bremser
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
R. F. Davis
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
H. Hofsäss
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
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Abstract

Single crystalline GaN-layers were implanted with radioactive 111In ions. The lattice location of the ions and the recovery of the implantation induced damage was studied using the emission channeling technique and perturbed-γγ-angular-correlation spectroscopy as a function of the annealing temperature. We find the majority of indium atoms on substitutional sites even directly after room temperature implantation, but within a heavily disturbed surrounding. During isochronal annealing treatments in vacuum, a gradual recovery of the implantation damage takes place between 873 K and 1173 K. After 1173 K annealing about 50 % of the In atoms occupy substitutional lattice sites with defect free surroundings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 407
Copyright
Copyright © Materials Research Society 1997

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References

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