Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Dalmer, M.
Restle, M.
Stötzler, A.
Vetter, U.
Hofsäss, H.
Bremser, M. D.
Ronning, C.
and
Davis, R. F.
1997.
Lattice Location and Luminescence Behavior of Rare Earth Elements Implanted in GaN.
MRS Proceedings,
Vol. 482,
Issue. ,
Ronning, C.
Carlson, E. P.
Thomson, D. B.
and
Davis, R. F.
1998.
Optical activation of Be implanted into GaN.
Applied Physics Letters,
Vol. 73,
Issue. 12,
p.
1622.
Ronning, C.
Linthicum, K.J.
Carlson, E.P.
Hartlieb, P.J.
Thomson, D.B.
Gehrke, T.
and
Davis, R.F.
1998.
Characterization of Be-Implanted GaN Annealed at High Temperatures.
MRS Proceedings,
Vol. 537,
Issue. ,
Dalmer, M.
Restle, M.
Sebastian, M.
Vetter, U.
Hofsäss, H.
Bremser, M. D.
Ronning, C.
Davis, R. F.
Wahl, U.
and
Bharuth-Ram, K.
1998.
Lattice site location studies of ion implanted Li8 in GaN.
Journal of Applied Physics,
Vol. 84,
Issue. 6,
p.
3085.
Kim, S.
Rhee, S. J.
Li, X.
Coleman, J. J.
and
Bishop, S. G.
1998.
Site-Selective Photoluminescence Spectroscopy of Er-Implanted Wurtzite Gan Under Various Annealing Conditions.
MRS Proceedings,
Vol. 512,
Issue. ,
Cao, X. A.
Pearton, S. J.
Singh, R. K.
Abernathy, C. R.
Han, J.
Shul, R. J.
Rieger, D. J.
Zolper, J. C.
Wilson, R. G.
Fu, M.
Sekhar, J. A.
Guo, H. J.
and
Pennycook, S. J.
1998.
Rapid Thermal Processing of Implanted GaN Up to 1500°C.
MRS Proceedings,
Vol. 537,
Issue. ,
Ronning, C.
Linthicum, K.J.
Carlson, E.P
Hartlieb, P.J.
Thomson, D.B.
Gehrke, T.
and
Davis, R.F.
1999.
Characterization of Be-Implanted GaN Annealed at High Temperatures.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 4,
Issue. S1,
p.
203.
Cao, X. A
Pearton, S. J.
Singh, R. K.
Abernathy, C. R.
Han, J.
Shul, R. J.
Rieger, D. J.
Zolper, J. C.
Wilson, R. G.
Fu, M.
Sekhar, J. A.
Guo, H. J.
and
Pennycook, S. J.
1999.
Rapid Thermal Processing of Implanted GaN up to 1500°C.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 4,
Issue. S1,
p.
671.
Wilson, R. G.
Zavada, J. M.
Cao, X. A.
Singh, R. K.
Pearton, S. J.
Guo, H. J.
Pennycook, S. J.
Fu, M.
Sekhar, J. A.
Scarvepalli, V.
Shu, R. J.
Han, J.
Rieger, D. J.
Zolper, J. C.
and
Abernathy, C. R.
1999.
Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,
Vol. 17,
Issue. 4,
p.
1226.
Burchard, A
Haller, E.E
Stötzler, A
Weissenborn, R
and
Deicher, M
1999.
Annealing of ion-implanted GaN.
Physica B: Condensed Matter,
Vol. 273-274,
Issue. ,
p.
96.
Pearton, S. J.
Zolper, J. C.
Shul, R. J.
and
Ren, F.
1999.
GaN: Processing, defects, and devices.
Journal of Applied Physics,
Vol. 86,
Issue. 1,
p.
1.
Ronning, C.
Dalmer, M.
Uhrmacher, M.
Restle, M.
Vetter, U.
Ziegeler, L.
Hofsäss, H.
Gehrke, T.
Järrendahl, K.
and
Davis, R. F.
2000.
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery.
Journal of Applied Physics,
Vol. 87,
Issue. 5,
p.
2149.
Alves, E.
Marques, J. G.
Da Silva, M. F.
Soares, J. C.
Bartels, J.
and
Vianden, R.
2001.
Heavy ion implantation in GaN epilayers.
Radiation Effects and Defects in Solids,
Vol. 156,
Issue. 1-4,
p.
267.
Lorenz, K.
Ruske, F.
and
Vianden, R.
2001.
Annealing Behaviour of GaN after Implantation with Hafnium and Indium.
physica status solidi (b),
Vol. 228,
Issue. 1,
p.
331.
Kucheyev, S.O
Williams, J.S
and
Pearton, S.J
2001.
Ion implantation into GaN.
Materials Science and Engineering: R: Reports,
Vol. 33,
Issue. 2-3,
p.
51.
Lorenz, K.
Ruske, F.
and
Vianden, R.
2002.
Reversible changes in the lattice site structure for In implanted into GaN.
Applied Physics Letters,
Vol. 80,
Issue. 24,
p.
4531.
Yu, Chang-Chin
Chu, C. F.
Tsai, J. Y.
Lin, C. F.
and
Wang, S. C.
2002.
Electrical and optical properties of beryllium-implanted Mg-doped GaN.
Journal of Applied Physics,
Vol. 92,
Issue. 4,
p.
1881.
Pearton, S.J.
2002.
Handbook of Thin Films.
p.
375.
Hofsäss, H
Vetter, U
Ronning, C
Uhrmacher, M
Bharuth-Ram, K
Hartmann, R
and
Strüder, L
2003.
Electron emission channeling spectroscopy using X-ray CCD detectors.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,
Vol. 512,
Issue. 1-2,
p.
378.
Lorenz, K.
and
Vianden, R.
2004.
Anomalous Temperature Dependence of the EFG in AlN Measured with the PAC-Probes 181Hf and 111In.
Hyperfine Interactions,
Vol. 158,
Issue. 1-4,
p.
273.