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MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270°C
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D13-03
- Print publication:
- 2008
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- Article
- Export citation