4 results
Complete Suppression of the Transient Enhanced Diffusion of B Implanted in Preamorphized Si by Interstitial Trapping in a Spatially Separated C-Rich Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C5.4
- Print publication:
- 2002
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Self-Interstitials and Substitutional C in Silicon: Interstitial- Trapping and C– Clustering
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C5.5
- Print publication:
- 2002
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Incorporation of Highly Concentrated Iron Impurities in InP by High Temperature Ion Implantation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 719 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, F10.2
- Print publication:
- 2002
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Carbon Diffusion and Clustering in SiGeC Layers Under Thermal Oxidation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J6.8
- Print publication:
- 2001
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