Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors
Research Article
Comparison of Microwave ECR and RF Plasmas for Dry Etching of Single Crystal 6H-SiC
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- 21 February 2011, 145
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On the Forward Conduction Mechanisms in SiC P-N Junctions
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- 21 February 2011, 151
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Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering.
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- 21 February 2011, 157
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Electronic and Optoelectronic Devices Based on GaN-AIGaN Heterostructures
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- 21 February 2011, 163
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InGaN/AlGaN Double-Heterostructure Blue Leds
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- 21 February 2011, 173
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Ion Milling and Reactive Ion Etching of III-V Nitrides
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- 21 February 2011, 179
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Characterization of CVD Diamond Films Used for Radiation Detection.
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- 21 February 2011, 185
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Photoresponse Study of Polycrystalline Diamond thin Film Schottky Diodes
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- 21 February 2011, 191
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Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation
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- 21 February 2011, 197
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Oxidation and ion Damage of Diamond by Reactive Ion Etching
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- 21 February 2011, 203
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Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide
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- 21 February 2011, 209
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UV-Sensitive Metal-Semiconductor Photodiodes on 6H-SIC.
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- 21 February 2011, 215
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Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy
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- 21 February 2011, 223
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Cobalt Silicide OHMIC Contacts to 6H-SiC
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- 21 February 2011, 229
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Characterization of MS, MiS, and Mos Contacts to Type IIB Diamond by Capacitance-Voltage and Current-Volt Age
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- 21 February 2011, 235
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Growth of Single Crystal Copper Films on Diamond Using Fcc-Iron Seed Layers
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- 21 February 2011, 241
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Solid-Phase Reaction of Tungsten Thin Films with Polycrystalline Diamond
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- 21 February 2011, 247
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Chemical Reaction Mechanisms of Diamond Growth
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- 21 February 2011, 255
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Diamond Chemical Vapor Deposition: Gas Compositions and film Properties
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- 21 February 2011, 267
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Diamond Homoepitaxy Kinetics: Growth, Etching, and the Role of Oxygen
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- 21 February 2011, 279
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