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Solid-Phase Reaction of Tungsten Thin Films with Polycrystalline Diamond

Published online by Cambridge University Press:  21 February 2011

A. Bachli ,
J. S. Chen ,
R. P. Ruiz  and
M-A. Nicolet
A. Bachli
Affiliation:
California Institute of Technology, Pasadena, CA 91125
J. S. Chen
Affiliation:
California Institute of Technology, Pasadena, CA 91125
R. P. Ruiz
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, CA 91109
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

The thermally induced solid-phase reaction of 135 nm thick sputter-deposited W films with polycrystalline CVD-grown diamond substrates is investigated. The samples are annealed in vacuum (5×10/-7 torr) at temperatures between 700 °C and 1100 °C for 1 hour and examined by 2 MeV 4He++ backscattering spectrometry, x-ray diffraction, and scanning electron microscopy.

The as-deposited W films contain roughly 5 at.% oxygen. After annealing the samples at 800 °C this oxygen concentration falls below the detection limit of less than 1 %. Incipient W2C phase formation occurs during annealing at 900 °C. The final state, the WC phase, is reached after annealing at 1100 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 247
Copyright
Copyright © Materials Research Society 1994

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