Symposium F – Materials Issues in Silicon Integrated Circuit Processing
Articles
Effect of Preanneal Heat Treatment on Oxygen Precipitation in Epitaxial Silicon
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- 28 February 2011, 139
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Defect Reactions and Atomic Diffusion in Silicon
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- 28 February 2011, 147
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Defects Characterization of Arsenic Implanted Silicon by Ac Hall Effect Measurements
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- 28 February 2011, 167
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Defect Structures Generated by Buried Amorphous Layer Regrowth in <100> Arsenic Implanted Silicon
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- 28 February 2011, 173
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Regrowth of Implanted–Amorphous Si
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- 28 February 2011, 179
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Dopant Diffusion From Ion- Implanted Tasi2
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- 28 February 2011, 183
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Role of Implant Energy on Defect Structures for Phosphorus Implanted Silicon
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- 28 February 2011, 191
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Deep-Levels Associated with Implanted Titanium in Silicon
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- 28 February 2011, 197
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Amorphization of Silicon by Boron Ion Implantation
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- 28 February 2011, 203
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Electrical Characteristics of Silicon p+n Diodes Fabricated BY B+ Implantation and Rapid Thermal Annealing in the Temperature Range 700 - 1000°C
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- 28 February 2011, 211
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Algorithms for Use in Modeling Diffusions on Personal Computers
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- 28 February 2011, 217
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The Formation of Highly Conductive Shallow Junction Layers in (100) Siliconl By Gallium Ion Implantation
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- 28 February 2011, 223
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Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications
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- 28 February 2011, 229
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Characteristics of Electromigration in Aluminum Interconnect Lines for Integrated Circuits
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- 28 February 2011, 249
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Electrical Properties of Polycrystalline-Silicon Thin Films for VLSI
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- 28 February 2011, 261
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Schottky Barrier Heights of Refractory Metals on Silicon
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- 28 February 2011, 273
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Silicon Transport in Lateral Silicide Growth of CrSi2
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- 28 February 2011, 287
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Comparison of Electromigration Induced Resistance Changes in Multilayer Al-Si/Ti and Al-Si/Ta Interconnects
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- 28 February 2011, 297
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Interfacial Tunnel Structures In Cmos Source/Drain Regions Following Selective Deposition of Tungsten
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- 28 February 2011, 303
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Characteristics of Selective Lpcvd W Films By Silicon Reduction
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- 28 February 2011, 309
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