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Defects Characterization of Arsenic Implanted Silicon by Ac Hall Effect Measurements

Published online by Cambridge University Press:  28 February 2011

H. Jaouen ,
G. Ghibaudo  and
C. Christofides
H. Jaouen
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs, UA CNRS 840, Instltut National Polytechnique, ENSERG, 23 rue des Martyrs, 38031 Grenoble, FRANCE.
G. Ghibaudo
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs, UA CNRS 840, Instltut National Polytechnique, ENSERG, 23 rue des Martyrs, 38031 Grenoble, FRANCE.
C. Christofides
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs, UA CNRS 840, Instltut National Polytechnique, ENSERG, 23 rue des Martyrs, 38031 Grenoble, FRANCE.
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Abstract

AC and DC Hall effects measurements as a function of temperature (77-300K) and frequency ( 1Hz-100KHz) have been performed to characterize Implanted Silicon films. This technique enables the determination of the annihilation processes of defects In such layers as a function of temperature of isochronal anneallngs (300°C to 1100°C during 1 hour). The experimental results are discussed with respect to proper transport models based on short and long range disorder considerations in order to find out the features of defects and Inhomogeneities arising from implantation and their thermal annihilation after isochronal annealing.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 167
Copyright
Copyright © Materials Research Society 1986

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