Silicon-on-insulator films were formed by ion implantation of oxygen and were treated with various annealing cycles at peak temperatures of 1150 °C, 1200 °C, and 1250 °C in a conventional diffusion furnace. The objective of this study was to examine the structural effects on samples with similar oxygen diffusion lengths (from 17 to 33 μm) achieved by annealing at different times and temperatures. The oxygen and silicon distributions, as well as the residual damage and precipitate size and distribution, were measured by Auger electron microscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy. In agreement with previous findings, higher temperatures produced a larger and less defective, “precipitate-free” superficial Si region. The buried oxide layer thickened from 0.33 μm to a maximum of 0.43 μm as some precipitates were incorporated into the buried oxide while others adjacent to the buried oxide grew in size (up to 47 nm) and decreased in relative number. A new result of this systematic study of annealing conditions was that the peak temperature has a greater effect on the morphology and crystal quality of the superficial Si structure than does time at temperature. Structural changes for longer anneals at 1150 °C are not equivalent to shorter anneals at 1250 °C even though the diffusion length of oxygen for these treatments is the same.

Amorphous selenium (a-Se) colloid particles have been directly photodeposited onto insulating substrates. Scanning Electron Microscopy (SEM) supported by kinetic adsorption measurements reveals the origin of the photodeposition process. The studies show that film formation occurs through a sequence of particle precipitation, growth, and photoadsorption. A plastic flow and coalescence process creates a continuous monolayer before a fast deposition rate of Se on the deposited materials commences. Surface forces seem to have an important role in the creation of the morphological structures of the adsorbed particles.

A theory to predict the orientation of radio-frequency (rf) sputter-deposited MoS2 films with respect to the substrate surface is presented. Oxygen-containing species such as H2O and -OH are postulated to be active sites that force crystallites to form with their basal planes perpendicular to the surface. X-ray diffraction is used to determine the crystallite orientation in films deposited on smooth, rough, or oxidized Si surfaces, as well as on fused silica or gold surfaces. The results support the theory. To produce MoS2 films with their crystallite basal planes parallel to a substrate surface (which has been suggested to be the low friction orientation), the active sites must be removed from the substrate by, for instance, heating in vacuum.

Conditions have been developed for the preparation of ZnP2 and deposition of its stoichiometric thin films, using the flash evaporation technique. Structural properties of the ZnP2 obtained have been studied using x-ray diffraction, and chemical composition has been established by the polarography technique. Optical absorption of thin films of β–ZnP2 has been investigated over the range 1.2–3.2 eV. Analysis of thin film data showed that β–ZnP2 is a direct band gap material. The XPS and UPS of β–ZnP2 show a shift in binding energy (BE), which is due to transfer of electrons from zinc to phosphorus.

The surface composition and bonding of a wide variety of silicon carbide powders and whiskers have been characterized by x-ray photoelectron spectroscopy (XPS). Ultrafine SiC powders, grown by a radio frequency plasma process, have been shown to exhibit graphitic carbon and a thin suboxide coating. Whiskers of SiC, grown in a vapor-liquid-solid or proprietary commercial process, were generally covered by heavier oxides than the powders and to a variable degree showed silica-like bonding. Most of the materials were subject to sample charging. Procedures were developed to estimate these charging effects and interpret the complete catalog of XPS spectra from these materials with respect to Fermi-level assignments. Charge independent quantities, such as oxygen Auger parameter and O(1s)–Si(2p) peak position difference, were found to agree with accepted values in the literature while exhibiting trends consistent with suboxide and silica bonding assignments. The data give a broad basis for understanding the feedstock surface chemistry which is involved during fabrication of monolithic or composite silicon carbide materials.

Beta–SiC thin films have been epitaxially grown on 6H–SiC {0001} substrates via chemical vapor deposition (CVD). The growth rate increased linearly with the source/carrier gas flow rate ratio. The activation energy for the growth of β–SiC grown on the Si face of the 6H–SiC substrate was 12 Kcal/mole. These observations are consistent with a surface reaction-controlled process. The as-grown surface morphology is dependent on the terminal layer of the substrate, the growth temperature, and the source/carrier gas flow rate ratio. The C face of a 6H–SiC {0001} substrate caused a higher growth rate and thus poorer surface morphology than the Si face under the same growth conditions. The optimum temperature range for growth of a flat, mirror-like β–SiC surface was determined to be 1773–1823 K in the present CVD system. The microstructure and nucleation of double positioning boundaries were investigated via transmission and scanning electron microscopies. Triangular defects and their modifications were also observed, and their origins have been discussed.

Electrical conductivity of cementitious materials with a wide range of chemical compositions has been studied during the first 24 h of hydration. Relationships between heat of hydration and electrical conductivity curves are discussed. Results are tentatively explained in terms of some physical and chemical parameters. Further evidence that the electrical conductivity of hydrating cement pastes is related to the hydration mechanisms operating in these systems was obtained. The order in which the cations of inorganic admixtures (chlorides and hydroxides) were found to increase the peak and rate of development of the electrical conductivity is the same order that they have been found to increase the heat liberated upon hydration of systems containing these admixtures.

Infrared absorption spectra have been used to characterize OH− and OD− ions at the surface and the bulk of undoped CaO, lithium doped CaO, and SrO crystals. Diffusion of deuterons from D2O vapor into these crystals was performed at elevated temperatures. Diffusion coefficients were obtained to be D (CaO) = 3 ⊠ 10−6 cm2/sec at 1773 K and D (SrO) = 4 ⊠ 10−7 cm2/sec at 1523 K. For the doped CaO crystal with lithium concentration of 310 ppm, the diffusion coefficient was measured to be D (CaO:Li) = 4 ⊠ 10−7 cm2/sec at 1473 K and the activation energy in the Arrhenius equation was estimated to be 1.7 eV.