Thin films of Ga-doped ZnO (GZO) were prepared on glass and Al2O3 (0001) substrates by using RF magnetron sputtering at a substrate temperature of 350 °C, RF power of 175 W, and working pressure of 6 mTorr. The effect of film thickness and substrate type on the structural and electrical properties of the thin films was investigated. X-ray diffraction study showed that GZO thin films on glass substrates were grown as a polycrystalline hexagonal wurtzite phase with a c-axis preferred, out-of-plane orientation and random in-plane orientation. However, GZO thin films on Al2O3 (0001) substrates were epitaxially grown with an orientation relationship of . The structural images from scanning electron microscopy and atomic force microscopy showed that the GZO thin films on glass substrates had a rougher surface morphology than those on Al2O3 (0001) substrates. The electrical resistivity of 1000 nm-thick GZO thin films grown on glass and Al2O3 (0001) substrates was 3.04 × 10−4 Ωcm and 1.50 × 10−4 Ωcm, respectively. It was also found that the electrical resistivity difference between the films on the two substrates decreased from 9.48 × 10−4 Ωcm to 1.45 × 10−4 Ωcm with increasing the film thickness from 100 nm to 1000 nm.

Titanium nitride nanopowders were synthesized through a chemical reduction of titanium tetrachloride by sodium in liquid ammonia. The products of the reaction were the mixture of sodium chloride and titanium nitride nanopowders. The mixture was then separated by ammonia extraction. The nanopowders were heated under vacuum up to 1200 °C and were characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), Brunauer-Emmet-Teller (BET) surface area measurement, and chemical analysis. The results show that the product is nanocrystalline cubic phase TiN with Ti/N atomic ratio performed 1:1, and the surface area is from 20 to 50 m2 ·g−1 depending on the heating temperature. The particle sizes estimated by the TEM analysis correspond well with the results of the surface area measurements. The XRD pattern indicates that the crystal size grows with an increase in heating temperature.

The influence of prior cold deformation on precipitating of alpha phase as well as the variation of hardness during aging has been investigated in solution-treated Ti-10Mo-8V-1Fe-3.5Al alloys. The results show that alpha phase precipitation could be obviously accelerated by the prior cold deformation. In the predeformed samples, a network pattern structure was observed with an optical microscope after aging treatment. It could be attributed to the phenomenon that the plate-shape alpha precipitates prefer to nucleate and grow in the regions with a high density of dislocations, especially inside slip bands. The hardness of both the predeformed and undeformed TB3 specimens after different aging times was measured and further predicted by a proposed strengthening model based on the grain refinement mechanism of the beta phase. The predicted results are consistent with the experimental results, especially in the later aging stages.

Microstructure evolution, mechanical properties, formability, and texture development were determined for AA6111 samples processed by asymmetric rolling (ASR) with different roll friction, velocity, or diameters, conventional rolling (CR), and equal-channel-angular pressing (ECAP). Highly elongated or sheared grain structures were developed during ASR/CR and ECAP, respectively. ASR led to improved r-values and formability compared with CR primarily as a result of the development of moderate shear-texture components analogous to those developed during ECAP of billet material. ASR based on different roll diameters gave the best combination of strength, ductility, and formability.

Dense, crystalline mullite (3Al2O3ċ2SiO2) coatings have been deposited by chemical vapor deposition on Si-based substrates using the AlCl3–SiCl4–CO2–H2 system. A graded coating composition has been achieved in the coatings, with the Al/Si ratio being stoichiometric (∼3) at the coating/substrate interface, and increasing monotonically toward the outer coating surface. The highest reported Al-rich mullite has been deposited in the process. At high Al/Si ratios, the mullite structure breaks down and an aluminosilicate phase similar to the metastable δ* Al2O3 is nucleated. Experimental evidence is presented in this study that this phase has some Si-incorporation in it and has been called δ*(Si)Al2O3. Like the other known aluminosilicates, δ*(Si)Al2O3 converts to mullite on heating at elevated temperatures.

The structural evolution with temperature of some V2O5 gels and thin films is presented, and the role of the hydrolysis conditions is investigated. Several techniques, i.e., x-ray diffraction, differential thermal analysis, infrared, and temperature-dependent Raman spectroscopy, have been used to follow the thermal behavior of the samples. When the bulk xerogels begin to change from a nanocrystalline phase to the orthorhombic α-V2O5, in the temperature range 280 to 300 °C, a growth of vanadium oxide nanotubes also occurs, while at higher temperatures the crystallization into the α phase prevails. A slightly different evolution is observed for heat treated thin films, which show a structure containing polyvanadate chains near room temperature. They also present a growth of nanotubes for intermediate temperatures and a complete crystallization into the α phase when the temperature is further increased.

Phase transformations in SnAg–Ni80P20 films were studied ex situ in parallel with in situ measurements of the corresponding transformation-induced stresses. Layered formation of Ni3Sn4 and Ni3P phases at an early stage of a reaction between SnAg and Ni80P20 films resulted in a tensile stress similar to the stress evolution in Sn–Ni80P20 films, despite the additional formation of Ag3Sn phase. Ag3Sn phase did not significantly affect the degree of stress evolution because of its islandlike and sporadic formation on the top surface of the Ni3Sn4 layer. Isothermal annealing showed that compressive stress, which was induced by the dominant formation of Ni3Sn4, developed after an initial evolution of tensile stress.

Ti3SiC2 powder of about 96 wt% purity was produced using TiCx and Si powders. The synthesis process was characterized by an exothermic reaction at ∼985 °C and low activation energy (∼27 kJ/mol) of conversion. Almost complete conversion to Ti3SiC2 phase was observed during sintering. The onset temperature of sintering was found to be at about 1060 °C using dilatometer. The density of nearly 99% (theoretical) was achieved through the pressureless sintering of Ti3SiC2 powder by 1 and 2 wt% Si powder additions. The sample (without sintering aid) sintered at 1500 °C for 4 h showed uniformly distributed angular grains, whereas the bimodal nature of the microstructure was observed when Si was added as a sintering aid.

We report our observations on the homoepitaxial diamond growth by microwave plasma chemical vapor deposition (MPCVD) experiments on Type Ib diamond substrates conducted by varying three independent variables. In a feed gas mixture of H2, N2, O2, and 13CH4, the amount of nitrogen was varied in the range of 0 to 4000 ppm, the amount of methane was varied from 2% CH4/H2 to 6% CH4/H2, and the substrate temperature was varied in the range of 850 to 1200 °C. We used isotopically enriched carbon-13 methane gas as the source of carbon in the plasma to clearly distinguish the grown diamond layer from the underlying substrate using Raman spectroscopy. The x-ray rocking curve measurements confirmed the homoepitaxial nature of the deposited layers with a slight increase in the full width at half-maximum for sample grown with the highest nitrogen content in the plasma. Optical and atomic force microscopy revealed dramatic changes in surface morphology with variation in each parameter. The nitrogen incorporation in carbon-13 diamond layers was monitored through photoluminescence spectroscopy of nitrogen–vacancy complexes. A twentyfold increase in diamond growth rate was clearly achieved in this multivariable study.

The use of magnetic elements within microelectronic devices are increasingly required in the fabrication of miniature magnetic structures with high energy densities. A synthesis technique is reported that yields Sb-doped CoPt nanoparticles possessing magnetic coercivities as high as 1671 kA/m and magnetic remanences of 295 kA/m, providing an energy product of 20 kJ/m2. Antimony doping was shown to influence the atomic ordering within the alloy sublattices, which allowed the tetragonalization temperature of the nanoparticle structure to be lowered by 200 °C to 400 °C, thereby reducing crystallite growth and sintering during annealing. The “as-synthesized” particles had average diameters of 4.5 nm, which rose to 25 nm on annealing at 600 °C. Synthesis of the doped CoPt particles with high-energy products together with control of particle size distributions in the range of 25 nm allows fabrication of micromagnetic structures by conventional microfabrication techniques such as spin coating and ink-jet printing.

Low solubility dopant-host systems are well suited to study secondary phase segregation-microstructure dependence. We discuss the effect of microstructure on secondary phase segregation in epitaxial/oriented ZnO thin films with Cr as an unfavorable dopant (Cr:ZnO). Since differences in thin film microstructure are a function of the substrate and its orientation, simultaneous chemical vapor depositions were carried out on single crystals of Si (100), c-axis oriented Al2O3 (c-ALO), and r-axis oriented Al2O3 (r-ALO) resulting in epitaxial film growth on r-ALO and c-axis oriented film growth on Si and c-ALO, with a difference in vertical grain boundary density. To enhance the analysis sensitivity to the microstructure difference, the thickness of Cr:ZnO films was maintained at ∼50 nm. High-resolution transmission electron microscopy (HRTEM) analysis indicates uniform stress distribution in Cr:ZnO grown on r-ALO. Surface sensitive x-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectroscopy (TOF-SIMS) techniques were utilized for analysis of the data. We observe that a higher grain boundary density and the presence of an amorphous layer at the interface for films grown on Si(100) single crystal led to interfacial Cr-based secondary phase segregation as opposed to lower grain boundary density and epitaxial films grown on c-ALO and r-ALO single crystals, respectively. We also discuss the effects of trace carbon solubility on the film microstructure/secondary phase segregation relationship.

In this article, we report on enhanced broadband near-infrared emission in Yb–Bi codoped phosphate glasses. The emission intensity of Yb–Bi codoped glass was ˜32 times larger than that of Bi-doped glass when excited with 980-nm laser diode. The highest 1/e fluorescent lifetime of Yb–Bi codoped glass reached 1650 μs. The dependence of emission intensity and fluorescent lifetime on Yb2O3 concentration was investigated. The enhancement of the near-infrared emission is due to energy transfer from Yb3+ (2F5/2–2F7/2) transition to Bi ions, and the highest energy transfer efficiency reached 50%. Yb–Bi codoped phosphate glass should be a promising candidate for broadband optical amplification.

We analyzed the crystallographic c-axis tilt of (001) Y2O3 films grown on biaxially textured Ni–5%W tapes under different oxygen flux conditions. Results show that different tilting mechanisms were effective in films with different oxygen stoichiometry. Moreover, the structure of the film/substrate interface investigated by transmission electron microscopy, and the residual strain of the film investigated by x-ray diffraction were also dependent on the film oxygen content. Although the oxygen stoichiometric Y2O3 sample exhibited a coherent film/substrate interface and the sharpest out-of-plane texture, the films grown under reduced oxygen pressure exhibited a smaller overall c-axis tilt due to formation of interface dislocations and regions in which the film oxygen vacancies ordered to form a lattice superstructure.

Single perovskite polycrystalline Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) thin films with PMN to PT ratios around the morphotropic phase boundary composition (070PMN-0.30PT, 0.65PMN-0.35PT, and 0.60PMN-0.40PT) have been prepared by chemical solution deposition (CSD). Air-stable and precipitate-free PMN and PT precursor sols were separately synthesized, and PMN-PT sols were obtained by the simple mixture in air of the former. The PMN-PT sols were deposited onto Pt-coated Si substrates and dried on a hot-plate. Crystallization of the films was carried out by rapid thermal processing (RTP) in oxygen, using different temperatures, soaking times, and heating rates. Single perovskite PMN-PT thin films were obtained at low temperatures (650 °C) with short soaking times (6s) and rapid heating rates (200 °C/s). The films show a columnar growth and a uniform thickness. Both the evolution of the perovskite distortion and the electrical properties with the PMN to PT ratio indicate the correct formation of the solid solution. The temperature and frequency dependences of the permittivity and the ferroelectric loops also indicate an increase of the relaxor characteristic of the films as compared with bulk materials. Piezoelectric coefficients were measured across the ferroelectric loop by optical interferometry, and an enhancement of piezoelectricity at the MPB composition was found. A piezoelectric d33 coefficient of ∼55 pC/N was measured in ∼300-nm-thick films of this composition with a saturation polarisation of Ps ∼25 μC/cm2.

A significant reduction of the undercooling of Sn-based solder alloys was previously reported when they were reacted with various under bump metallurgies (UBMs). In the present study, new experiments have been designed and carried out to understand the undercooling behavior of various Cu- and Ni-doped solders on Ni UBM. Two competing mechanisms were further investigated that include the formation of intermetallic compounds (IMCs) at solder/UBM interface and the change of solder composition because of the dissolution of Ni UBM into solder. Two types of IMCs, including both Ni3Sn4 and Cu6Sn5 that were formed at the interface, were correlated with the undercooling of Sn–0.2Cu and Sn–3.8Ag–0.2Cu solders. In addition, the compositional changes of various Sn-based solders after reactions with Ni UBM were analyzed. On the basis of the experimental results, it was found that the significant reduction in undercooling is primarily caused by dissolved Ni atoms from Ni UBM and the concurrent formation of Ni3Sn4 IMC in the solder matrix. Finally, the beneficial effect of Ni dissolution is thermodynamically favorable as confirmed by the thermodynamic calculations and differential scanning calorimetry measurements with various Ni-doped solder alloys.

Al-based high-aspect-ratio microscale structures (HARMS) are basic building blocks for all-Al microdevices. Bonding of Al-based HARMS is essential for device assembly. In this paper, bonding of Al-based HARMS to flat Al plates using Al-Ge thin film intermediate layers is investigated. The structure of sputter codeposited Al-Ge thin films was studied by high-resolution transmission electron microscopy as a function of the average film composition. The structure of the interface region between Al-based HARMS bonded to flat Al plates is studied by combining focused ion beam sectioning and scanning electron microscopy. An extended bonding interface region, ∼100 μm in width, is observed and suggested to result from liquidus/solidus reactions as well as diffusion of Ge in solid Al at the bonding temperature of 500 °C. The extended interface region is suggested to be beneficial to Al-Al bonding via Al-Ge intermediate layers.

MAX-phase carbides (M is an early transition metal, A is an A-group element) exhibit an interesting bonding characteristic of alternative stacking of strong M–C bonds and relatively weak M–A bonds in one direction. In the present first-principles total energy calculations, we establish the relationship between mechanical properties and electronic structure for ternary M2AC (M = Ti, V, Cr, A = Al, Si, P, S) carbides. By systematically tuning elements on the M and A sites, pronounced enhancements of bulk modulus, elastic stiffness, and ideal shear strength are achieved in V-containing V2AC (A = Al, Si, P, and S) carbides. It is suggested that tailoring on the A site is more efficient than on the M site in strengthening the mechanical properties of studied serial carbides. The results highlight a general trend for tailor-made mechanical properties of ternary M2AC carbides by control of chemical bonding.

The strain-induced austenite (γ) to martensite (α′) transformation in AISI 316L austenitic stainless steel, either in powders or bulk specimens, has been investigated. The phase transformation is accomplished using either ball-milling processes (in powders)—dynamic approach—or by uniaxial compression procedures (in bulk specimens)—quasi-static approach. Remarkably, an increase in the loading rate causes opposite effects in each case: (i) it increases the amount of transformed α′ in ball-milling procedures, but (ii) it decreases the amount of α′ in pressed samples. Both the microstructural changes (e.g., crystallite size refinement, microstrains, or type of stacking faults) in the parent γ phase and the role of the concomitant temperature rise during deformation seem to be responsible for these opposite trends. Furthermore, the results show the correlation between the γ → α′ phase transformation and the development of magnetism and enhanced hardness.