This work presents a methodology for designing microwave acoustic filters, based on two-port bulk acoustic wave resonators (also known as stacked crystal filters), with either Butterworth or Chebyshev response. The presented methodology makes it possible to design this type of filter without any optimization work, and, moreover, for its closed-form expressions design can be obtained. As a validation example, we address the design of a pair of filters for UMTS cellular phone handsets. The different simulations carried out show the good agreement between the transmission response of the designed filters and the theoretical response.

In this paper, different techniques are combined in a unique characterization system dedicated to power transistor linearity improvement. Successive optimizations are performed using source-pull/load-pull techniques at fundamental, harmonic, and base-band frequencies associated with an instantaneous memoryless base-band predistortion procedure. Measurement results performed at 1.575 GHz on a metal semiconductor field effect transistor (MESFET) power device biased in class-AB under a quadrature phase shift keying (QPSK)-modulated signal excitation show that fundamental frequency load-pull increases the output power and power-added efficiency (PAE) by 2 dB and 16 percentage points, respectively. The fundamental frequency source-pull measurements lead to an adjacent channel power ratio (ACPR) variation equal to 3 dB. For harmonic load-pull (at 2f0), it has been found that some impedances greatly improve linearity but output power and PAE decrease. Source-pull characterization at the second harmonic frequency allows one to find a trade-off between output power, efficiency, and linearity. Moreover, the influence of base-band impedance on ACPR and error vector magnitude (EVM) is found to be 15 dB and 5.5 percentage points, respectively. Finally, instantaneous memoryless base-band predistortion improves ACPR and EVM values by 5 dB and 1 point, respectively.

This paper presents measurement results providing the mapping of the opto-microwave transfer function performed on an SiGe microwave heterojunction phototransistor (HPT). This measurements will be used to extract a guideline for designing phototransistors. A mapping of the HPT's gain in low frequency helps to estimate the shape of the optical beam used for the measurement. The study also focuses on the cutoff frequency mapping of the device in phototransistor mode. Finally, these results are used to determine the general optimization rules in the SiGe HPTs design.

Extensive simulation experiments are carried out for the first time, to study the optical modulation of the high- frequency characteristics of III–V GaN-(gallium nitride) based top-mounted and flip-chip IMPact Avalanche Transit Time (IMPATT) oscillators at MM-wave window frequency (140.0 GHz). It is found that the un-illuminated GaN IMPATT is capable of delivering a RF power of 5.6 W with an efficiency of 23.5% at 145.0 GHz. Frequency up-chirping of 6.0 GHz and a degradation of RF power output by almost 15.0% are further observed in case of photo-illuminated FC IMPATT. The study reveals that compared to predominate electron photocurrent in top-mounted IMPATT, photo-generated leakage current dominated by hole in flip-chip IMPATT has more pronounced effect on the GaN-based device as regards the frequency chirping and decrease of negative conductance and total negative resistance per unit area of the device. The inequality in the magnitudes of electron and hole ionization rates in the wide band gap semiconductor has been found to be correlated with the above results. The study reveals that GaN IMPATT is a potential candidate for replacing conventional IMPATTs at high-frequency operation. These results are useful for practical realization of optically controlled GaN-based high-power IMPATTs for application in MM-wave communication systems.

This paper presents a technique that enables both efficiency and linearity enhancements of power amplifiers (PA) used in communication systems. It consists in the implementation of a dynamic bias control combined with digital base-band predistortion. The aim of this paper is to describe a methodology and successive steps of the design procedure to reach optimum performances in terms of power added efficiency (PAE) and linearity. It is here applied to a 100 W wide-band lateral diffused metal oxide semiconductor (LDMOS) push–pull amplifier (50–500 MHz) driven by orthogonal frequency division multiplexing (OFDM) signals. When the amplifier is driven by a continuous wave (CW) signal and operates at a constant 28 V drain bias voltage, it exhibits 100 W output power and 60% PAE. When it is driven by an OFDM signal, a 10 dB output power back-off is necessary to have a −25 dBc adjacent channel power ratio (ACPR) and PAE decreases down to 10%. By properly implementing an envelope tracking bias system, 40 W output power along with 38% PAE and −27 dBc ACPR have been reached. Applying base-band digital predistortion provides additional linearity improvements at high PAE (for only one point PAE lost, a 5 dB improvement is obtained for ACPR).

Systems based on secondary surveillance radar (SSR) downlink signals, both with directional and with omni-directional antennae (such as in multilateration), are operational today and more and more installations are being planned. In this frame, high-density traffic leads to the reception of a mixture of several overlapping SSR replies. By nature, SSR sources are sparse, i.e. with amplitude equal to zero with significantly high probability. While in the literature several algorithms performing sources separation with an m-element antenna have been proposed, none has satisfactorily employed the full potential of sparsity for SSR signals. Most sparsity algorithms can separate only real-valued sources, although we present in this study two algorithms to separate the complex-valued SSR sources. Recorded signals in a live environment are used to demonstrate the effectiveness of the proposed techniques.

This paper presents an investigation of a concurrent low-cost dual-band power amplifier (PA) fabricated in SiGe technology, able to simultaneously operate at two frequencies of 2.45 and 3.5-GHz, including an evaluation of its system level performance potentiality. Taking into account the technology novelty and the lack of device characterization and modeling, a hybrid (MIC) approach has been adopted both for a fast prototyping of the PA and for the evaluation of the device potentiality based on an extensive linear and nonlinear characterization. The comparison of PA performance in single-band or concurrent mode operation will be presented. In particular, the measured PA prototype shows an output power of 17.2 and 17-dBm at a 1-dB compression point, at 2.45 and 3.5-GHz, respectively, for CW single-mode operation, with a power added efficiency around 20%. System-level analysis predicts that, when the PA is operated under the 20-MHz Orthogonal Frequency-Division Multiplexing (OFDM) concurrent signals, the maximum output power levels to maintain the Error Vector Magnitude (EVM) within 5% are 11 and 3.5-dBm at 2.45 and 3.5-GHz, respectively. Moreover, new concepts and possible new system architectures for the development of the next generation of the multi-band transceiver front-end will be provided with an extensive system-level evaluation of the amplifier.

This paper deals with the various aspects of electromagnetic field impact modeling on the SiGe heterojunction bipolar transistor (HBT) device for microwave applications. This study differs from conventional HBT device reliability research associated with other stresses. The originality of this study comes from the generation of a localized electromagnetic field using the near-field bench. A coupling phenomenon between the electromagnetic field and the micro-strip lines connecting the transistor are evaluated by electromagnetic and electrical simulations. After stress, the input and the transmission scattering parameters are affected. This is primarily due to the deviation of the input impedance and the reduction of the transconductance, respectively. The stress effects have been related to a base current degradation. This degradation is due to a hot carrier introducing generation/recombination trap centers at the Si/SiO2 interface of the emitter–base spacer oxide, which leads to an excess recombination base current.

Piezoelectric thin films have existing and promising new applications in microwave filter technologies. The final performance depends on many parameters, and very specifically on the materials properties of each involved material. In this article, materials and properties for thin-film bulk acoustic wave resonators are discussed on some selected issues: the piezoelectric coefficients and acoustic losses of AlN, the relation of the first one with microstructural parameters, the inclusion of parasitic elements, and the merits of and problems with ferroelectric materials.

Performance comparison is made between on-chip spiral inductor in flip-chip versus wirebond package technology. Full-wave electromagnetic simulation and on-strip measurement techniques were used to study the performance fluctuations of inductor within flip-chip environment. Results show that the performance of a flipped silicon-based spiral inductor is affected by the radio frequency (RF) current return path differences. The RF current return path for flip-chip is concentrated on the surface of silicon layer exclusively because back side ground under silicon is floating in flip-chip technology. In addition, the bump proximity effect is also considered. On-chip inductors in flip-chip environment must be optimized by reducing the eddy current in the silicon substrate and parasitic affects by adjusting design parameters. The equivalent circuit model of the flipped on-chip spiral inductor is verified with measured results over broadband frequencies. Also, the RF flip-chip characterization technique using on-strip measurement method is presented.

A class of micromachined acoustic filters is presented in which the number of individual resonant structures is reduced to 1 (monolithic filter). This resonant structure is comprised of a stack of thin-film piezoelectric-on-silicon. Symmetric and anti-symmetric resonance modes (dual modes) of the silicon structure are piezoelectrically excited and coupled to realize a 2-pole narrowband filter. High-order lateral bulk acoustic resonance modes of a rectangular plate are utilized to design dispersed-frequency UHF filters fabricated on a single substrate. Thickness mode filters are also realized at GHz frequencies using a new interdigitated electrode design. Additionally, it is shown that the filter bandwidth can be controlled by changing the dimensions of the resonant structure and the electrode pattern. Narrowband lateral mode filters with filter Q’s larger than 300 at ~440 MHz and thickness mode filters with filter Q’s in the range of 150–900 at ~3.1 GHz are demonstrated.

This paper presents switched sequential amplifiers (SSAs) using reconfigurable directional couplers as power splitters and combiners. The SSA concept allows matching the efficiency characteristics to the amplitude probability density distribution of the applied modulated signal. Therefore the back-off efficiency can be increased significantly. A three-channel SSA can e.g. theoretically achieve a −10 dB back-off efficiency exceeding 50%. Design parameters and potential efficiency enhancement are discussed for two- and three-channel SSAs. After a brief introduction of the used switched couplers, the circuit concept for two- and three-channel SSAs is described. Calculations for the possible efficiency enhancement are presented. Also signal distortions by the directional couplers are outlined. The paper closes with experimental results for a two-channel SSA.

The use of digital predistortion for linearizing a millimeter-wave power amplifier (PA) is investigated. A PA operating at 38 GHz is designed using an accurate non-quasi-static transistor model, taking into account both short- and long-term memory effects. A realistic test signal is then used for the identification of a nonlinear auto-regressive moving average (NARMA) behavioral model of the PA. The NARMA-based digital predistorter is then derived and formulated in terms of basic predistortion cells, especially suitable for efficient implementation in an FPGA. The performance of the predistortion solution is preliminarily assessed by means of computer simulations.

This paper presents the design optimization of circular antenna arrays of isotropic radiators using simulated annealing. The problem has been formulated to achieve a desired value of sidelobe level and a minimum possible value of beamwidth. This is accomplished by jointly optimizing the excitation amplitude and spacing between elements. Simulation examples have been given and comparison has been carried out with particle swarm optimization method.

The aim of this study is to increase the capacity of the 1090 MHz secondary surveillance radar (SSR) channel by novel transmission and decoding techniques. In particular, multilateration stations have omni-directional antennae; hence considering aircraft traffic and including the extension of surveillance to cooperating vehicles, the reception of superimposed signals is more and more probable. We propose mitigating this problem by combining frequency agility and source separation techniques; we analyze the pertaining channel capacity improvement, and then evaluate the detection and timing estimation for frequency-shifted and separated signals.

A high impedance surface (HIS) consisting of metallic square patches electrically connected one to each other with resistors is shown. Tunability of the absorption factor is achieved by the resistor value. The absorbing band of the loaded HIS is determined by the phase of the signal reflected by this structure. The main contribution of the paper is to demonstrate the absorption behavior over a wide range of incidence angle for both Transverse Electric (TE) and Transverse Magnetic (TM) polarizations. Using an equivalent circuit the resistor effect is investigated. It is shown that at resonance, the judicious choice of the resistor may lead to a significant absorption. The use of a waveguide simulator to characterize the performance of the loaded HIS is investigated. These methods have been used to design an ultra-thin absorber about λ8.4 GHz/35 thick.

This paper presents a behavioral electrothermal model implementation for high RF power amplifiers dedicated to the simulation of radar application in the Scilab/Scicos environment. This model, based on the direct coupling between a behavioral electrical model and a physics-based reduced thermal model, allows to predict nonlinear effects, high-frequency memory effects, and thermal effects due to the amplifier self-heating. System model implementation in Scilab/Scicos platform allows fast time domain simulation with very good convergence properties.

A 2.4 GHz CMOS blocker filtering low-noise amplifier (BF-LNA) suitable for Bluetooth™ application is presented. The circuit employs a differential amplifier topology with a current mirror active load and a notch filter. Each path amplifies differentially with the common mode input signal, but there is a notch filter rejecting only the wanted signal at one path. By subtracting the two signals from each path, the large interferers are rejected and only the wanted signal is amplified. Therefore, it becomes a narrow-band amplifier with blocker filtering capability, realizing a receiver system without need of the off-chip SAW filter. The BF-LNA is designed using a 0.13-μm CMOS process. The measured performances are a gain of 11.4 dB, and a noise figure of 1.85 dB. Attenuation levels at 400 MHz apart from the target frequency are −13 and −29 dBc at each sideband. The P1dB,in and IIP3 are −8.2 and 1.46 dBm, respectively. The proposed BF-LNA can reject large interferers at the front-end of the receiver system with a good noise figure.

This paper describes some aspects of the fabrication and modeling of a GaN device to be employed in a power amplifier covering one WiMAX frequency band. The work has been carried out in the frame of the TARGET's NoE work package WiSELPAS. Details concerning the AlGaN/GaN device technology and the performed linear and nonlinear measurements are provided. Since these new devices require specific nonlinear models, a procedure for selecting an appropriate simplified nonlinear model and for extracting its parameters is discussed and evaluated. The developed nonlinear model has been experimentally tested under linear and nonlinear conditions. The agreement between experimental and model-predicted performance suggests that the described model could be useful in a preliminary power amplifier design.

This paper presents the theoretical formulation of a lithographical bending control (LBC) method that uses lithographical degrees of freedom to control the bending of a multilayered beam. LBC is applied to a piezoelectric actuator that uses PZT as the piezoelectric material. The theoretical model is compared with measurements using a weakly fixed bridge structure suited for curvature measurement.