In this paper, a light-controlled frequency reconfigurable antenna is presented for 5 G, WLAN, and radio altimeter applications. The given (44 × 28) mm2 antenna consists of a radiating V-shaped structure and three stub arrangements. The main λ/2 length stub is used to feed the antenna and the two λ/4, λ/8 length open-circuited stubs are located perpendicular to the main feeding stub for tuning the frequency of the antenna. The length of the stubs can be adjusted by placing (4 × 1.2) mm photodiode switches on the perpendicular stubs. Four experiments are carried out to analyze the performance of the antenna. When light and DC bias voltage is not applied (Experiment-1) to the photodiodes the proposed antenna radiates from 4.1 to 4.63 GHz with 12% bandwidth. When light is applied to the photodiode without DC bias voltage and DC bias voltage is applied without light (Experiment-2,3) the antenna reconfigures its frequency band from 3.43 to 3.6GHz and 4.8 to 5.4 GHz with 4.85% and 12% bandwidth respectively. The antenna shifts the radiation from 4.8 to 5.5 GHz with 14% bandwidth when the light and DC bias voltage is applied to the antenna(Experiment-4). The measured gain of the proposed antenna is greater than 3.8dBi in all the experiments.

This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

This prospective, longitudinal study compared the frequency and pattern of mood changes between outpatients receiving usual care for bipolar disorder who were either taking or not taking antidepressants. One hundred and eighty-two patients with bipolar disorder self-reported mood and psychiatric medications for 4 months using a computerized system (ChronoRecord) and returned 22,626 days of data. One hundred and four patients took antidepressants, 78 did not. Of the antidepressants taken, 95% were selective serotonin or norepinephrine reuptake inhibitors, or second-generation antidepressants. Of the patients taking an antidepressant, 91.3% were concurrently taking a mood stabilizer. The use of antidepressants did not influence the daily rate of switching from depression to mania or the rate of rapid cycling, independent of diagnosis of bipolar I or II. The primary difference in mood pattern was the time spent normal or depressed. Patients taking antidepressants frequently remained in a subsyndromal depression. In this naturalistic study using self-reported data, patients with bipolar disorder who were taking antidepressants—overwhelmingly not tricyclics and with a concurrent mood stabilizer—did not experience an increase in the rate of switches to mania or rapid cycling compared to those not taking antidepressants. Antidepressants had little impact on the mood patterns of bipolar patients taking mood stabilizers.

The objective is to demonstrate a reproducible carbon nanotube (CNT)-based technology for radio frequency (RF) switch working in the range of 40–60 GHz and fulfilling the specifications: low losses, high isolation, and an operating voltage below 30 V. The first processed component had an operating voltage of 14 V for an ohmic contact in a Nano-Electro Mechanical System (NEMS) tweezer design. This result is confirmed by theory with an operating voltage of 13 V. A capacitive-contact NEMS is also developed using multi-walled CNTs (MWCNTs) coated with a SiO2 dielectric layer deposited by electron beam induced deposition method (EBID). High Frequency Simulation Software (HFSS) RF-simulation on an innovative NEMS geometry shows encouraging results with transmission ratios between “on” state and “off” state up to 34% for ohmic-contact switch and 25% for a capacitive-contact switch.

We present here a new set of equations for modeling the I–V characteristics of Field Effects Transistors (FETs), particularly optimized for AlGaN/GaN HEMTs. These equations describe the whole characteristics from negative to positive breakdown loci, and reproduce the current saturation at high level. Using this model enables to decrease the modeling process duration when a same transistor topology is used for several applications in a T/R module. It can even be used for switches design, which is the most demanding application in terms of I–V swing. Moreover, particular care was taken to accurately model the first third orders of the current derivatives, which is important for multione applications. We also focused on an accurate definition of the nonlinear elements such as capacitances for power applications. There are 18 parameters for the main current source (and six for both diodes Igs and Igd). This can be compared to Tajima's equations-based model (13 parameters) or to the Angelov model (14 parameters), which only fit the I–V characteristics for positive values of Vds. We will detail here the model formulation, and show some measurements/modeling comparisons on both I–V, [S]-parameters and temporal load-pull obtained for a 8 × 75 μm GaN HEMT, with 0.25 μm gate length.

The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power amplifiers, robust low-noise amplifiers, or power switches to prepare the next generation of Tx-Rx modules.

Deactivation of light-activated squid rhodopsin was studied in vitro using GTPγS binding by G-protein as a direct measure of rhodopsin activity. Deactivation was inhibited by dilution of the retinal suspension or by removal of soluble components. Deactivation could be restored by addition of soluble material to washed membranes. These results indicate that the deactivation is not due entirely to a conformational transition within rhodopsin itself, but depends on the interaction with other molecules. The possibility that phosphorylation is involved in the deactivation was studied. Deactivation occurred in the presence and absence of added ATP. Deactivation also occurred in the presence of kinase inhibitors and after addition of apyrase, which reduced residual ATP levels to below 1μM. These results indicate that light-induced phosphorylation is not required for deactivation of squid rhodopsin. In this regard deactivation of squid rhodopsin is different from that of vertebrate rhodopsin, which requires phosphorylation.