9 results
High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 15 / Issue 3 / April 2023
- Published online by Cambridge University Press:
- 16 June 2022, pp. 384-392
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Quantitative Strain and Compositional Studies of InxGa1−xAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques
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- Journal:
- Microscopy and Microanalysis / Volume 20 / Issue 4 / August 2014
- Published online by Cambridge University Press:
- 23 April 2014, pp. 1262-1270
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- August 2014
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Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies
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- International Journal of Microwave and Wireless Technologies / Volume 5 / Issue 4 / August 2013
- Published online by Cambridge University Press:
- 18 February 2013, pp. 437-445
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A G-band cryogenic MMIC heterodyne receiver module for astronomical applications
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- International Journal of Microwave and Wireless Technologies / Volume 4 / Issue 3 / June 2012
- Published online by Cambridge University Press:
- 12 March 2012, pp. 283-289
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A voltage-mode class-S power amplifier for the 450 MHz band
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- International Journal of Microwave and Wireless Technologies / Volume 3 / Issue 3 / June 2011
- Published online by Cambridge University Press:
- 18 February 2011, pp. 311-318
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Millimeter-wave GaN-based HEMT development at ETH-Zürich
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- International Journal of Microwave and Wireless Technologies / Volume 2 / Issue 1 / February 2010
- Published online by Cambridge University Press:
- 20 April 2010, pp. 33-38
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Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
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- International Journal of Microwave and Wireless Technologies / Volume 2 / Issue 1 / February 2010
- Published online by Cambridge University Press:
- 23 March 2010, pp. 105-114
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AlGaN/GaN epitaxy and technology
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 2 / Issue 1 / February 2010
- Published online by Cambridge University Press:
- 11 March 2010, pp. 3-11
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Current limitation after pinch-off in AlGaN/GaN FETs
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
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- 13 June 2014, e2
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- 2000
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