10 results
Measurement of the ratio of substitutional to interstitial dopant-incorporation in nanostructures
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- Journal:
- Microscopy and Microanalysis / Volume 13 / Issue S03 / September 2007
- Published online by Cambridge University Press:
- 07 September 2007, pp. 428-429
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- September 2007
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Studies of core structures and strain fields of extended defects in GaN using Exit-Wave-Reconstruction and numerical correction of lens aberrations
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- Journal:
- Microscopy and Microanalysis / Volume 13 / Issue S03 / September 2007
- Published online by Cambridge University Press:
- 07 September 2007, pp. 38-39
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- September 2007
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Structural investigation of amorphous/crystalline interfaces by iterative image series matching
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- Journal:
- Microscopy and Microanalysis / Volume 13 / Issue S03 / September 2007
- Published online by Cambridge University Press:
- 07 September 2007, pp. 34-35
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- September 2007
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Self-Interstitial Supersaturation During Ostwald Ripening of End-of-Range Defects in Ion-Implanted Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 429 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 109
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- 1996
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Formation and Thermal Stability of End-of-Range Defects in Ge Implanted Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 316 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 167
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- 1993
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Formation of Extrinsic Defects at the Amorphouscrystalline Interface in Ion-Implanted Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 319 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 189
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- 1993
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Relaxation-Induced Gettering of Metal Impurities in Silicon: Microscopic Properties of Effective Gettering Sites
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- Journal:
- MRS Online Proceedings Library Archive / Volume 262 / 1992
- Published online by Cambridge University Press:
- 03 September 2012, 957
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- 1992
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Formation of End-of-Range Defects in Silicon at Low Temperatures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 262 / 1992
- Published online by Cambridge University Press:
- 26 February 2011, 1103
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- 1992
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A Tem Investigation of Secondary Dislocations in Grain Boundaries in Germanium
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 945
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- 1989
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Tem Study of Metal Impurity Precipitates in the Surface Regions of Silicon Wafers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 104 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 215
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- 1987
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