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Epitaxy growth and characterization of InAs p-i-n photodetector through ion exchange for mid-infrared detection on Si substrates
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- Journal:
- MRS Communications / Volume 8 / Issue 3 / September 2018
- Published online by Cambridge University Press:
- 08 August 2018, pp. 1085-1091
- Print publication:
- September 2018
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- Article
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