6 results
Effects of Beam-Induced Carbon Deposition on Electron Energy-Loss Spectroscopy Analysis of Compositional Fluctuations in InGaN/GaN Quantum Well LEDs
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- Journal:
- Microscopy and Microanalysis / Volume 25 / Issue S2 / August 2019
- Published online by Cambridge University Press:
- 05 August 2019, pp. 652-653
- Print publication:
- August 2019
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Growth of Nonpolar AlN and AlGaN on 4H-SiC (1-100) by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF28-03
- Print publication:
- 2005
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Molecular beam epitaxy of GaN on lattice-matched ZrB2 substrates using low-temperature GaN and AlN nucleation layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E8.36
- Print publication:
- 2004
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Recombination Related to Two-Dimensional Electron Gas of AlxGa1-xN/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y10.47
- Print publication:
- 2003
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Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source
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- Journal:
- MRS Online Proceedings Library Archive / Volume 719 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, F1.2
- Print publication:
- 2002
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Fast Proton Damage Effects on the Luminescence Properties of High-Quality GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.36.1
- Print publication:
- 2001
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