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InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 10 / Issue 1 / February 2018
- Published online by Cambridge University Press:
- 27 November 2017, pp. 39-46
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Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristics
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- Journal:
- The European Physical Journal - Applied Physics / Volume 64 / Issue 2 / November 2013
- Published online by Cambridge University Press:
- 15 November 2013, 20101
- Print publication:
- November 2013
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- Article
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