3 results
MOCVD Growth of High-Hole Concentration (>2×1019 cm−3) P-Type InGaN for Solar Cell Application
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1123 / 2008
- Published online by Cambridge University Press:
- 21 March 2011, 1123-P07-02
- Print publication:
- 2008
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NITRIDE BASED SCHOTTKY-BARRIER PHOTOVOLTAIC DEVICES
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1040 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 1040-Q09-27
- Print publication:
- 2007
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Influence of Growth Conditions on Phase Separation of InGaN Bulk Material Grown by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I07-20
- Print publication:
- 2006
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