5 results
Formation of Radiative Binding States for the Pairs Between Acceptors in Heavily Acceptor-Doped Gaas.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 145 / 1989
- Published online by Cambridge University Press:
- 28 February 2011, 493
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- 1989
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Mg+ Ion Implantation into GaAs : Annealing and Photoluminescence Properties
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- Journal:
- MRS Online Proceedings Library Archive / Volume 144 / 1988
- Published online by Cambridge University Press:
- 26 February 2011, 483
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- 1988
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Optical Properties of Se+- and Zn+-Implanted GaAs: Photoluninescence Behavior at the Band-Edge
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- Journal:
- MRS Online Proceedings Library Archive / Volume 126 / 1988
- Published online by Cambridge University Press:
- 21 February 2011, 171
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- 1988
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Photoluminescence Spectra of C+-Implanted GaAs: Experimental Verification on Amphoteric Features of Carbon Impurities in GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 100 / 1988
- Published online by Cambridge University Press:
- 26 February 2011, 331
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- 1988
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Formation of a New Blue-Shift Emission in Highly Be-Doped GaAs Grown by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 102 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 175
- Print publication:
- 1987
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