3 results
Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy
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- Journal:
- The European Physical Journal - Applied Physics / Volume 30 / Issue 2 / May 2005
- Published online by Cambridge University Press:
- 11 March 2005, pp. 77-82
- Print publication:
- May 2005
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Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 293-296
- Print publication:
- July 2004
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Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements
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- Journal:
- The European Physical Journal - Applied Physics / Volume 22 / Issue 2 / May 2003
- Published online by Cambridge University Press:
- 06 May 2003, pp. 77-82
- Print publication:
- May 2003
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