7 results
Disordering of InGaN/GaN Superlattices after High-Pressure Annealing
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 293-298
- Print publication:
- 1999
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Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.42
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- 1998
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Thickness Dependence of Electronic Properties of GaN Epi-layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 525
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- 1996
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Optoelectronic and Structural Properties of High-Quality GaN Grown by Hydride Vapor Phase Epitaxy
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- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 189
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- 1995
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Threading Dislocation Densities in GaAs Grown on Reduced Area Si Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 308 / 1993
- Published online by Cambridge University Press:
- 15 February 2011, 417
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- 1993
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Determination of size and distribution of second phases using nuclear microscopy
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- Journal:
- Journal of Materials Research / Volume 7 / Issue 9 / September 1992
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2373-2378
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- September 1992
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A comparative study of the electrical properties and microstructure of polycrystalline YBaCuO and thallium-based thin films
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- Journal:
- Journal of Materials Research / Volume 6 / Issue 7 / July 1991
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1408-1414
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- July 1991
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