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Self-Consistent Mosfet Tunneling Simulations—Trends in the Gate and Substrate Currents and the Drain-Current Turnaround Effect with Oxide Scaling
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- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 227
- Print publication:
- 1999
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- Article
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