7 results
Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K6.2
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- 2002
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A Percolative Approach to Electromigration Modelling
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- Journal:
- MRS Online Proceedings Library Archive / Volume 612 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, D2.7.1
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- 2000
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Early Detection of the Metallization Quality Using Moderately Accelerated Electromigration Stress Conditions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 516 / January 1998
- Published online by Cambridge University Press:
- 10 February 2011, 15
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- January 1998
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The Influence of Thermal-Mechanical Effectson Resistance Changes During and After Electromigration Experiments
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- Journal:
- MRS Online Proceedings Library Archive / Volume 391 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 513
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- 1995
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Non-Destructive Electrical Techniques as Means for Understanding the Basic Mechanisms of Electromigration
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- Journal:
- MRS Online Proceedings Library Archive / Volume 337 / 1994
- Published online by Cambridge University Press:
- 25 February 2011, 515
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- 1994
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The Evaluation of the True Test Temperature During Wafer-Level Electromigration Tests
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- Journal:
- MRS Online Proceedings Library Archive / Volume 265 / 1992
- Published online by Cambridge University Press:
- 15 February 2011, 289
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- 1992
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Electrical Characterization of Ion Imiplanted, Thermally Annealed TiN Films Acting as Diffusion Barriers on Shallow Junction Silicon Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 45 / 1985
- Published online by Cambridge University Press:
- 25 February 2011, 183
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- 1985
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