Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
Spectroscopic techniques
Research Article
Scanning room temperature photoluminescence in SiNx:H layers
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 289-291
-
- Article
- Export citation
Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 293-296
-
- Article
- Export citation
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 297-300
-
- Article
- Export citation
Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 301-303
-
- Article
- Export citation
The influence of crystal imperfections on the shape of exciton emission spectrum in ZnO single crystals
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 305-307
-
- Article
- Export citation
Scattering tensors for semiconductors of C46v–P63 mc space group: GaN, ZnO, CdS, ZnS, and BeO
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 309-312
-
- Article
- Export citation
Investigation of recombination processes involving defect-related states in (Ga,In)(As,Sb,N) compounds
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 313-316
-
- Article
- Export citation
Mössbauer spectroscopy on Fe impurities in diamond
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 317-320
-
- Article
- Export citation
Manifestation of defects in phonon spectra of binary zinc-blende compounds
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 321-324
-
- Article
- Export citation
Raman scattering characterization of residual strain and alloy composition in bulk Si1−xGex crystal
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 325-328
-
- Article
- Export citation
Electron beam methods
Research Article
Investigation of silicon oxynitride and amorphous silicon multilayers
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 329-332
-
- Article
- Export citation
Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 333-336
-
- Article
- Export citation
Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 337-340
-
- Article
- Export citation
Growth of ultra-thin and highly relaxed SiGe layers under in-situ introduction of point defects
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 341-344
-
- Article
- Export citation
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 345-348
-
- Article
- Export citation
Anomalous electrical properties of dislocation slip plane in Si
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 349-351
-
- Article
- Export citation
Defect mapping over large area wafers
Research Article
Comparative study on residual strain profiles in GaAs substrates grown by LEC and VB techniques
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 353-356
-
- Article
- Export citation
Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 357-361
-
- Article
- Export citation
Contact-free investigation of the EL2-defect in the surface of GaAs wafers
-
- Published online by Cambridge University Press:
- 15 July 2004, pp. 363-366
-
- Article
- Export citation
Multi-techniques investigations
Research Article
Defect imaging in ultra-thin SiGe (100) strain relaxed buffers
-
- Published online by Cambridge University Press:
- 09 February 2011, pp. 367-370
-
- Article
- Export citation