Studies were made into the influence of oversized rare-earth atoms on the processes of radiation defect accumulation and annealing in two-component zirconium alloys. Zr and Zr-X alloys (where X = Sc, Dy, Y, Gd and La) have been irradiated with 2 MeV electrons at 82 K. The radiation-induced resistivity has been measured in situ as a function of dose. As compared to unalloyed zirconium, the alloys have exhibited a decrease in the resistivity gain, this decrease being proportional to both the concentration and the size of dopant atoms. A possible explanation for the effect is offered. The difference between the recovery processes in zirconium and in its alloys has been studied. To this end, the irradiated specimens were subjected to isochronal annealing at temperatures between 82 and 350 K. It is shown that Dy, Y, Gd and La atoms trap interstitial atoms at stage I of the recovery. The dissociation of interstitial-impurity complexes takes place at stage II. In zirconium alloys with Dy, Y and Gd, splitting of recovery stage III into two substages has been revealed. The Zr-La alloy has not shown this splitting. Isothermal annealing data were used to determine the activation energies of recovery stages, and also to calculate the activation energy spectra for zirconium and its alloys. The oversized atoms of rare-earth metals are shown to interact effectively with both the interstitials and the vacancies in the zirconium matrix. This effect must be taken into account when developing new radiation-resistant Zr-base alloys or modifying the ones already existing.