Symposium FF – Epitaxy & Applications of Si-Based Heterostructures
Research Article
Effect of Interface-Related Deep Levels on high Sensitivity of Schottky Diode Photodetector Based on Ultrathin InGaAs Film on Si
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- 10 February 2011, 157
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Lateral Ordering of Self-Assembled Ge Islands
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- 10 February 2011, 165
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Stacked Layers of C-Induced Ge Quantum Dots
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- 10 February 2011, 171
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Using Growth Kinetics for Nanoengineering of Si-Ge Surfaces
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- 10 February 2011, 177
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Ge-Quantum Dots on SI(001) Tailored by Carbon Predeposition
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- 10 February 2011, 183
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Measurements of Confined Energy Levels and Coulomb Charging Effect in Self-Assembled Ge Quantum Dots by Admittance Spectroscopy
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- 10 February 2011, 191
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Real-Time Observation of Ti Silicide Epitaxial Islands Growth with the Photoelectron Emission Microscopy
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- 10 February 2011, 197
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Magnetron Sputter Heteroepitaxy of Si1-x.Gex/Si(001): The Evolution of the Cross-Hatched Surface
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- 10 February 2011, 203
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Si/Ge/Si(001) Magnetron Sputter Heteroepitaxy: the Initial Stages of “Hut”- Cluster Overgrowth
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- 10 February 2011, 209
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Role Of Surface Instability And Anisotropy On Strain Relaxation Of Sige On Si(110)
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- 10 February 2011, 215
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Fabrication Of Sub 30 Nanometer Sheets Of Single Crystalline Silicon
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- 10 February 2011, 221
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Feasibility Of Novel Si-Based Interminiband Lasers
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- 10 February 2011, 227
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Band Alignment of Si1-xGex And Si1-x-y.GexCy Quantum Wells On Si (001)
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- 10 February 2011, 235
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Direct Optical Measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si (100) by Heterojunction Internal Photoemission
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- 10 February 2011, 245
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Photoluminescence In Strain Compensated Siisigec Multiple Quantum Wells
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- 10 February 2011, 251
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Strong Deviation Of The Lattice Parameter In Si1-x-yGexCy Epilayers From Vegard's Rule
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- 10 February 2011, 257
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Epitaxial Growth And Electronic Characterization Of Carboncontaining Silicon-Based Heterostructures
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- 10 February 2011, 263
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Carbon Incorporation in Si1-yCy Alloys Grown by Ultrahigh Vacuum Chemical Vapor Deposition
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- 10 February 2011, 275
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The Application of Novel Chemical Precursors for the Preparation of Si-Ge-C Heterostructures and Superlattices
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- 10 February 2011, 281
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Limitations to the use of Sb as a Surfactant During SiGe MBE
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- 10 February 2011, 289
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