Research Article
High-Quality AlGaN/GaN HFET Structures Grown by MOCVD Using Intermediate High Temperature AlGaN/GaN Superlattices
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- 11 February 2011, L9.4
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Screw Dislocations in MBE GaN Layers Grown on Top of HVPE Layers: Are They Different?
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- 11 February 2011, L3.48
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Segregation effects and bandgap engineering in InGaN quantum-well heterostructures
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- 11 February 2011, L6.5
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Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy
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- 11 February 2011, L3.40
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Indium distribution inside quantum wells: The effect of growth interruption in MBE
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- 11 February 2011, L6.6
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The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor
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- 11 February 2011, L12.10
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High Performance HFET Devices on Sapphire and SiC: Passivation with AlN
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- 11 February 2011, L9.6
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Formation of quantum dots by self-rearrangement of metastable 2D GaN
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- 11 February 2011, L8.8
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Structural Defects in Mg-doped GaN and AlGaN grown by MOCVD
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- 11 February 2011, L12.7
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Distinct Magnesium Incorporation Behavior in Laterally Grown AlGaN
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- 11 February 2011, L1.11
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Optical Band Gap Measurements of InN Films in the Strong Degeneracy Limit
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- 11 February 2011, L11.22
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A GaN-free LED Structure for High UV-light Extraction
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- 11 February 2011, L7.2
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Epitaxial Growth for Solar-Blind AlGaN Photodetector Imaging Arrays by Metalorganic Chemical Vapor Deposition
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- 11 February 2011, L7.9
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Low Temperature Laser-Assisted Gas Phase Reactivity of TMGa with NH3 and Oxygen-Containing Compounds (H2O, CH3OH, O(CH3)2) in Constrained Pulsed Expansions
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- 11 February 2011, L3.7
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Comparisons of Gallium Nitride and Indium Nitride Properties after CF4 / Argon Reactive Ion Etching
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- 11 February 2011, L3.55
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Efficient GaN-based Micro-LED Arrays
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- 11 February 2011, L6.28
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Ion Beam Study of Early Stages of Growth of GaN films on Sapphire
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- 11 February 2011, L3.5
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Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer
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- 11 February 2011, L3.21
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Properties of Surface States on GaN and Related Compounds and Their Passivation by Dielectric Films
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- 11 February 2011, L2.6
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Observations of electron velocity overshoot during high-field transport in AlN
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- 11 February 2011, L10.2
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