Highly electrically conductive and optically transparent thin films were fabricated on conventional glass substrates using different purified carbon nanotubes, single-wall (SWNT), double-wall (DWNT), and multi-wall (MWNT) carbon nanotubes. The starting carbon nanotube materials were first made into homogenous solution with either sodium cholate or dimethylformamide. Two different fabrication approaches, airbrushing and membrane filtration methods, were used and compared. The chemical modification of thionyl chloride was employed to further improve the optical and electric performance of the SWNT films. Additionally, the temperature dependence of the resistance measured on carbon nanotube networks has been investigated.

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nanowires. Uniform device performance was obtained using an in situ doping method, with average field-effect mobilities exceeding 100 cm2/(V•s). Prototype fully-transparent TFT devices on glass substrates showed excellent performance metrics in terms of transconductance and on/off ratio. The combined advantages of SnO2 nanowires: namely a low cost growth process, high electron mobility, and optical transparency; make the system well suited for large-scale transparent electronics on low-temperature substrates.

We present results of a study of the effect of various surface treatments on the adsorption properties of hydrogen on single-walled carbon nanotubes (SWNTs) and activated carbon. The alteration of the surface area by thermal and chemical treatments of SWNTs was studied by Raman spectroscopy, x-ray photoelectron spectroscopy (XPS) and nitrogen adsorption. The Horwath-Kawazoe (HK) method was applied to describe the increase of the surface area and of the pore volume of the SWNT samples. The surface treatments lead to substantially improvement of hydrogen adsorption at 77 K and 1 atm. The averaged heat of adsorption (enthalpy), estimated from a Dubinin-Astakhov (DA) analysis, was found to be about 3.6 and 4.2 kJ/mol for heat-treated and as-received SWNTs, respectively.

We successfully synthesized high quality single crystal Si nanowires using Al catalyst via vapor-liquid-solid (VLS) mechanism, having diameters ranging from 10 to 200 nm with 10∽20 §­ of length. Characterization of physical and chemical properties of Al-catalyzed Si nanowires using transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) analysis showed that single crystal Si nanowires can be grown with Al-catalyst at 540 ¡C and selective etching of Al existing at the tip of nanowire can provide metal-free Si nanowires that are compatible with conventional Si-based IC process. By using plasma doping method, it was confirmed that the doping level can be controlled and the boron was successfully introduced on Si substrate with 3×1022/cm3 of peak doping concentration.

The electrical and thermal properties of carbon nanotubes (CNT)-polymer nanocomposite materials have been studied. The carbon nanostructures were analyzed by several analytical techniques, including Electronic Microscopy, Raman Spectroscopy, and X-Ray Photoelectron Spectroscopy. Carbon nanotubes were grown by catalytic chemical vapor deposition on metal/metal oxide catalytic systems using acetylene or other hydrocarbons. Raman Spectroscopy was used to analyze the CNT and CNT-polymer nanocomposite materials. The thermal and electrical properties of these CNT-polymer nanocomposite materials depend on the amount of CNTs in the polymer and also on the uniformity of the CNTs dispersed in the polymer. A reduction in electrical resistivity was observed, as the nanotubes' concentration in the polymeric films increased, while optical transparency remained 85 % or higher relative to acrylic films without nanotubes.

In present paper we describe development and manufacturing of the pressure sensor based on electron field emission from carbon nanotubes (CNTs). The sensor consisted of two parts, silicon membrane as an anode and multiwalled CNTs on a silicon cathode, creating a vacuum micro-chamber. Both electrodes were fabricated from the silicon single crystal (Si) wafer of the orientation (<100>) doped by phosphorus. The CNTs were grown by plasma enhanced CVD using iron catalyst in atmospheric pressure microwave torch. The catalyst was patterned into the area corresponding to the membrane dimensions. The thin CNTs with the diameter about 80 nm were straight standing perpendicularly to the substrate due to a crowding effect. In order to find the threshold current the emission characteristics of prepared sensors were measured.