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Thermal Stability of Sputter Deposited Tantallum Silicide Films

Published online by Cambridge University Press:  15 February 2011

G. A. Dixit
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
R. Sundaresan
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
F. S. Chen
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
Y. S. Lin
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
C. C. Wei
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
F. T. Liou
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
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Abstract

Tantallum silicide films were sputter deposited from targets with different Si/Ta stoichiometries. The films were then subjected to thermal treatments. Silicon precipitation was observed on films deposited from silicon rich targets. The effects of silicon precipitates on device characteristics was studied. A method to suppress silicon precipitation is reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Murarka, S. P., J. Vac. Sci. Technol., 17, 775 (1980).Google Scholar
2. Murarka, S. P., Silicides for VLSI Applications, (Academic Press, 1983).Google Scholar
3. Murarka, S. P. and Fraser, D. B., J. Appl. Phys. 51, 342 (1980).Google Scholar
4. Murarka, S. P. and Fraser, D. B., J. Appl. Phys. 51, 350 (1980).Google Scholar
5. Moffat, W. G., The Handbook of Binary Phase Diagrams, (General Electric Co., Schenectady, New York, 1982).Google Scholar
6. Murarka, S. P., Fraser, D. B., Lindenberger, W. S. and Sinha, A. K., J. Appl. Phys. 51, 3241 (1980).Google Scholar