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Selectivity Mechanisms in Low Temperature (<950°C) Selective Silicon Epitaxy

Published online by Cambridge University Press:  25 February 2011

J.T. Fitch  and
D.J. Denning
J.T. Fitch
Affiliation:
Motorola Inc., Advanced Products Research and Development Laboratory, MD-K10, 3501 Ed Bluestein Blvd., Austin, TX 78721
D.J. Denning
Affiliation:
Motorola Inc., Advanced Products Research and Development Laboratory, MD-K10, 3501 Ed Bluestein Blvd., Austin, TX 78721
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Abstract

Low temperature selective silicon epitaxy was studied over a range of process pressures and HCI flows using a SiH2Cl2/HCl/H2 based chemistry. Thermodynamic modelling was carried out with the aid of the SOLGAS program to investigate the effect of process pressure, HCI flow rate, and leaks on the distribution of gas phase species. Selectivity results are interpreted in terms of the defect microchemistry on SiO2 surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 517
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Yamada, T. et.al., IEDM, 35 (1989).Google Scholar
[2] Semiconductor International, August, 1991, p. 19.Google Scholar
[3] Schubert, P.J. and Neudeck, G. W., IEEE 37(11), 2336 (1990).Google Scholar
[4] Ban, V.S. and Gilbert, S.L., J. Electrochem. Soc. 122, 1382 (1975).Google Scholar
[5] Claassen, W.A.P. and Bloem, J., J. Cryst. Growth 50, 807 (1980).Google Scholar
[6] Bloem, J. and Giling, L.J., Current Topics in Materials Science 1, 147 (1978).Google Scholar
[7] Zachariasen, W.H., J. Am. Ceram. Soc. 54, 3481 (1932).Google Scholar
[8] Niwano, M., Takakuwa, Y., Katakura, H., and Miyamoto, N., J. Vac. Sci. Technol. A9(2), 212 (1991).Google Scholar
[9] Claassen, W.A.P. and Bloem, J., J. Electrochem. Soc. 127, 194 (1980).CrossRefGoogle Scholar
[10] Claassen, W.A.P. and Bloem, J., J. Electrochem. Soc. 127, 1836 (1980).Google Scholar
[11] SOLGASMIX-PV For The PC, BW. Sheldon, Oak Ridge National Laboratory, 1989.Google Scholar
[12] Hunt, L.P. and Sirtl, E., J. Electrochem. Soc. 119, 1741 (1972).Google Scholar
[13] Regolini, J.L., Bensahel, D., Scheid, E., and Mercier, J., Appl. Phys. Left. 54(7), 658 (1989).Google Scholar
[14] Borland, J.O. and Drowley, C.I., Solid State Technology, August 1985, p. 141.Google Scholar
[15] Borland, J.O. and Beinglass, I., Solid State Technology, January 1990, p. 73.Google Scholar
[16] Friedrich, J.A., Neudeck, G.W., and Liu, S.T., Appl. Phys. Lett. 53(25), 2543 (1988).Google Scholar
[17] Lou, J.C., Oldham, W.G., Kawayoshi, H., and Ling, P., J. Appl. Phys. 70(2), 685 (1991).CrossRefGoogle Scholar
[18] Sedgewick, T.O. and Agnello, P.D., “The Use of Low-Temperature Epitaxial Growth to Decorate Oxygen Related Defects on Si Surfaces”, unpublished manuscript.Google Scholar