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Physical and Electrical Properties of Al2O3, HfO2, and their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric

Published online by Cambridge University Press:  11 February 2011

Takaaki Kawahara ,
Kazuyoshi Torii ,
Seiichi Fukuda ,
Takeshi Maeda ,
Atsushi Horiuchi ,
Hiroyuki Ito ,
Akiyoshi Muto ,
Yoshitake Kato  and
Hiroshi Kitajima
Takaaki Kawahara
Affiliation:
Semiconductor Leading Edge Technologies, Inc. (Selete), 34, Miyukigaoka, Tsukuba-shi, Ibaraki-ken, 305–8501, JapanPhone: +81–298–63–6316 Fax: +81–298–56–3482 E-mail: [email protected]
Kazuyoshi Torii
Affiliation:
Semiconductor Leading Edge Technologies, Inc. (Selete), 34, Miyukigaoka, Tsukuba-shi, Ibaraki-ken, 305–8501, JapanPhone: +81–298–63–6316 Fax: +81–298–56–3482 E-mail: [email protected]
Seiichi Fukuda
Affiliation:
Semiconductor Leading Edge Technologies, Inc. (Selete), 34, Miyukigaoka, Tsukuba-shi, Ibaraki-ken, 305–8501, JapanPhone: +81–298–63–6316 Fax: +81–298–56–3482 E-mail: [email protected]
Takeshi Maeda
Affiliation:
Semiconductor Leading Edge Technologies, Inc. (Selete), 34, Miyukigaoka, Tsukuba-shi, Ibaraki-ken, 305–8501, JapanPhone: +81–298–63–6316 Fax: +81–298–56–3482 E-mail: [email protected]
Atsushi Horiuchi
Affiliation:
Semiconductor Leading Edge Technologies, Inc. (Selete), 34, Miyukigaoka, Tsukuba-shi, Ibaraki-ken, 305–8501, JapanPhone: +81–298–63–6316 Fax: +81–298–56–3482 E-mail: [email protected]
Hiroyuki Ito
Affiliation:
Semiconductor Leading Edge Technologies, Inc. (Selete), 34, Miyukigaoka, Tsukuba-shi, Ibaraki-ken, 305–8501, JapanPhone: +81–298–63–6316 Fax: +81–298–56–3482 E-mail: [email protected]
Akiyoshi Muto
Affiliation:
Semiconductor Leading Edge Technologies, Inc. (Selete), 34, Miyukigaoka, Tsukuba-shi, Ibaraki-ken, 305–8501, JapanPhone: +81–298–63–6316 Fax: +81–298–56–3482 E-mail: [email protected]
Yoshitake Kato
Affiliation:
Semiconductor Leading Edge Technologies, Inc. (Selete), 34, Miyukigaoka, Tsukuba-shi, Ibaraki-ken, 305–8501, JapanPhone: +81–298–63–6316 Fax: +81–298–56–3482 E-mail: [email protected]
Hiroshi Kitajima
Affiliation:
Semiconductor Leading Edge Technologies, Inc. (Selete), 34, Miyukigaoka, Tsukuba-shi, Ibaraki-ken, 305–8501, JapanPhone: +81–298–63–6316 Fax: +81–298–56–3482 E-mail: [email protected]
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Abstract

We have investigated physical and electrical properties of Al2O3, HfO2, and their alloy films deposited on 300mm Si wafers by Atomic Layer Deposition (ALD). It is found that Al2O3 films are not crystallized even after the heat treatment of 1050°C, while HfO2 films are already crystallized even after a-Si deposition (530°C). The crystallization temperature can be higher by adding Al2O3 to HfO2. It is confirmed by in-plane XRD and plane views of TEM that HfAlOx films with lower Hf content (Hf/(Hf+Al) <30%) are amorphous without phase separation after annealing at 1050°C and 5sec. The dependences of equivalent oxide thicknesses (EOT) on the physical thicknesses of Al2O3, HfAlOx (Hf/(Hf+Al)∼22%), and HfO2 films in poly-silicon gate capacitors indicate that those dielectric constants k are ∼9, 14, and 23, respectively. The gate dielectric with EOT of 1.5nm and the leakage current density Jg of 3mA/cm2 can be fabricated with 2nm-thick HfAlOx (22%) film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N5.6
Copyright
Copyright © Materials Research Society 2003

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References

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