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Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Published online by Cambridge University Press:  11 February 2011

Erik Haralson ,
Tobias Jarmar ,
Johan Seger ,
Henry H. Radamson ,
Shi-Li Zhang  and
Mikael Östling
Erik Haralson
Affiliation:
Kungl Tekniska Högskolan, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40, Kista, Sweden
Tobias Jarmar
Affiliation:
Uppsala University, The Ångström Laboratory, Box 534, SE-751 21, Uppsala, Sweden
Johan Seger
Affiliation:
Kungl Tekniska Högskolan, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40, Kista, Sweden
Henry H. Radamson
Affiliation:
Kungl Tekniska Högskolan, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40, Kista, Sweden
Shi-Li Zhang
Affiliation:
Kungl Tekniska Högskolan, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40, Kista, Sweden
Mikael Östling
Affiliation:
Kungl Tekniska Högskolan, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40, Kista, Sweden
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Abstract

The reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N4.8
Copyright
Copyright © Materials Research Society 2003

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References

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