Hostname: page-component-7bb8b95d7b-2h6rp Total loading time: 0 Render date: 2024-09-13T09:09:18.246Z Has data issue: false hasContentIssue false
  • English
  • Français

Mocvd Growth Of Single Crystal Znsxsel−x On Si

Published online by Cambridge University Press:  28 February 2011

Patricia A. Sekula ,
Stanley M. Vernon  and
Chris J. Keavney
Patricia A. Sekula
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
Stanley M. Vernon
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
Chris J. Keavney
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
Get access

Abstract

Single crystal ZnSxSel−x films have been grown for the first time on (111) Si substrates by low-pressure MOCVD. The epitaxial films clearly show a passivating effect on silicon solar cells, and act as antireflective coatings. Attempts at incorporating Al as an n-type dopant were unsuccessful as the films remain semi-insulating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 405
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Spitzer, M., Shrevehurn, T.J., Vera, E.S., and Loferski, J.J., Rec. of the 14th IEEE Photovoltaic Specialists Conference 1980, p. 375.Google Scholar
2. Vernon, S.M., Haven, V.E., Tobin, S.P., and Wolfson, R.G., J. Cryst. Growth, 77 (1986) 530.Google Scholar
3. Gerstenberg, D. in: Handbook of Thin Film Technoloy, Eds. Maissel, L. and Glang, R. (McGraw-Hill, New York, 1970).Google Scholar
4. Stutius, W., J. Cryst. Growth, 59, (1980) 1.Google Scholar
5. Derived from: Stujius, W., J. Electron. Mat., 10 (1981) 95.Google Scholar
6. Williams, J.O., Ng, T.L., and Wright, A.C., J. Cryst. Growth, 59 (1980) 1.Google Scholar