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Growth Studies of Heteroepitaxial Ge Films ON Si

Published online by Cambridge University Press:  28 February 2011

D.J. Heim ,
T.G. Holesinger ,
K.M. Lakin  and
H.R. Shanks
D.J. Heim
Affiliation:
Microelectronics Research Center, Iowa State University, 1925 Scholl Road, Ames, Iowa.
T.G. Holesinger
Affiliation:
Microelectronics Research Center, Iowa State University, 1925 Scholl Road, Ames, Iowa.
K.M. Lakin
Affiliation:
Microelectronics Research Center, Iowa State University, 1925 Scholl Road, Ames, Iowa.
H.R. Shanks
Affiliation:
Microelectronics Research Center, Iowa State University, 1925 Scholl Road, Ames, Iowa.
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Abstract

One of the approaches to the growth of GaAs on Si substrates involves the use of a heteroepitaxial buffer layer such as Ge to reduce lattice mismatch. Recently, we have had success in growing heteroepitaxial Ge films on low temperature (∼275-500°C) Si substrates by the ionized cluster beam (ICB) technique. The design of a computer-controlled phase modulated ellipsometer for rapid monitoring of the initial stages of nucleation will be described. Ellipsometric data for single crystalline, polycrystalline and amorphous morphologies are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 523
Copyright
Copyright © Materials Research Society 1988

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