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FE-Modeling and Physical Testing of IGBTs for Press-Packaging

Published online by Cambridge University Press:  10 February 2011

A. Pirondi ,
G. Nicoletito ,
P. Cova ,
M. Pasqualetti ,
M. Portesine ,
P. E. Zani  and
A. Camera
A. Pirondi
Affiliation:
University of Parma, Viale delle Scienze, 43100 Parma – Italy
G. Nicoletito
Affiliation:
University of Parma, Viale delle Scienze, 43100 Parma – Italy
P. Cova
Affiliation:
University of Parma, Viale delle Scienze, 43100 Parma – Italy
M. Pasqualetti
Affiliation:
Ansaldo Trasporti – Semiconductors Unit, Via N. Lorenzi, 8, 16152 Genova – Italy
M. Portesine
Affiliation:
Ansaldo Trasporti – Semiconductors Unit, Via N. Lorenzi, 8, 16152 Genova – Italy
P. E. Zani
Affiliation:
Ansaldo Trasporti – Semiconductors Unit, Via N. Lorenzi, 8, 16152 Genova – Italy
A. Camera
Affiliation:
Ansaldo Trasporti – Semiconductors Unit, Via N. Lorenzi, 8, 16152 Genova – Italy
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Abstract

The reliability of press-packed IGBTs strongly depends on the solutions adopted in terms of heat dissipation and thermo-mechanical stress management so as to guarantee satisfactory electrical and thermal contact conditions throughout the service life. In this paper, two aspects concerning the design process of a single-chip press-pack IGBT are outlined: i) cyclic stresses and strains occurring in the package and in the chip are discussed on the basis of finite element (FE) simulations, ii) a testing rig developed for accelerated testing of single IGBT chips under controlled contact pressure conditions is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 171
Copyright
Copyright © Materials Research Society 1999

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References

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